rather limited dangling-bond absorption of electromagnetic waves in amorphous nanosilicon, broadly variable free-carrier absorption (free-carrier concentration ≈10 17 cm −3 ) [4] in controllably doped silicon has recently brought another important modality to Si NPs, related to space-selective in situ anti-cancer hyperthermiabased therapies via near-and mid-infrared (IR) laser, or radiofrequency (RF) Joule heating. [4,6] However, to date strong Si-NP doping was realized only via minor introduction of gold, [7] since Si is rather immiscible material. [8] In contrast, n-hyperdoped Si was actively studied for the last decade as a material platform, supporting fabrication of mid-IR sensitizers for solar cells, [9] broadband active media for thin-film photovoltaics, [1] broad-band mid-IR nightvision and imaging devices for novel promising and emerging applications. The currently achieved strong (≈10 3 -10 4 cm −1 ) smooth [10][11][12][13][14] or band-engineered [15,16] mid-IR absorption in sulfur-(or selenium and tellurium [12] ) doped Si was suggested for raising solar-cell efficiency up to 49% through efficient harvesting of near-and mid-IR solar radiation. [17] Besides the donor-based band-to-band absorption, considerable free-carrier absorption via thermal ionization of shallow donor states was also reported in such Si nanoparticles (NPs), which are innovative promising light-harvesting components of thin-film solar cells and key-enabling biocompatible theranostic elements of infrared-laser and radiofrequency hyperthermia-based therapies of cancer cells in tumors and metastases, are significantly advanced in their near/mid-infrared band-to-band and free-carrier absorption via donor sulfur-hyperdoping during high-throughput facile femtosecond-laser ablative production in liquid carbon disulfide. High-resolution transmission electron microscopy and Raman microscopy reveal their mixed nanocrystalline/ amorphous structure, enabling the extraordinary sulfur content of a few atomic percents and very minor surface oxidation/carbonization characterized by energy-dispersive X-ray spectro scopy and X-ray photoelectron spectroscopy. A 200-nm thick layer of the nanoparticles exhibits near−mid-infrared absorbance, comparable to that of the initial 380-micron thick n-doped Si wafer (phosphordopant concentration ≈10 15 cm −3 ), with the corresponding extinction coefficient for the hyperdoped NPs being 4-7 orders higher over the broadband spectral range of 1-25 micrometers. Such ultimate, but potentially tunable mid-IR structured, multi-band absorption of various sulfur-impurity clusters and smooth free-carrier absorption are break through advances in mid-infrared (mid-IR) laser and radiofrequency (RF) hyperthermia-based therapies, as envisioned in the RF-heating tests, and in fabrication of higher-efficiency thin-film and bulk photovoltaic devices with ultra-broad (UV−mid-IR) spectral response.