Large-signal HBT characterization and modeling at millimeter wave frequencies

Teeter, D.A.; East, J.R.; Haddad, G.I.

doi:10.1109/22.238532

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Cited by 4 publications

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“…+ HBT's model verification can also be obtained from gain compression curves [5]- [7] (the maximum output power was 15 dBm). Figs.…”

Section: Vbe (V)mentioning

confidence: 99%

Model verification for a high-power-efficiency AlGaAs-GaAs HBT

Deshours¹,

Bergeault²,

Berghoff³

et al. 1996

IEEE Microw. Guid. Wave Lett.

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Abstruct4Ieterojunction bipolar transistors (HBT's) with 2700 pm2 of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficiency under variable operating conditions. These measurements are performed with the aim of designing power amplifiers for mobile communications.

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“…+ HBT's model verification can also be obtained from gain compression curves [5]- [7] (the maximum output power was 15 dBm). Figs.…”

Section: Vbe (V)mentioning

confidence: 99%