Model verification for a high-power-efficiency AlGaAs-GaAs HBT

Abstract

Abstruct4Ieterojunction bipolar transistors (HBT's) with 2700 pm2 of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficiency under variable operating conditions. These measurements are performed with the aim of designing power amplifiers for mobile communications.