2020
DOI: 10.1063/5.0002536
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Large tunnel magnetoresistance in a fully epitaxial double-barrier magnetic tunnel junction of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3

Abstract: We report large tunnel magnetoresistance (TMR) ratios of up to 219% at 300 K and 366% at 3.7 K obtained for a high-quality fully epitaxial double-barrier magnetic tunnel junction (MTJ) composed of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3. The obtained TMR ratios are among the highest values reported in Fe/MgO/Fe structures. This result may be attributed to the small in-plane wave vectors of the tunneling electrons injected from the Nb-doped SrTiO3 electrode with a small carrier density, demonstrating good compatibili… Show more

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Cited by 5 publications
(6 citation statements)
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“…The TMR ratio increases with reduced temperature, reaching 914% at 3 K. This LT value is much larger than typical Fe/MgO/Fe (250~370%). 4,24,25,31 We obtained the effective tunneling spin polarization at LT (P0) to be 0.905 using the Jullière equation: TMR = 2𝑃 /(1  𝑃 ), 36 suggesting close to half-metallic Δ1 states in our Fe/MgO/Fe structure. The temperature dependence of the TMR ratio is mainly determined by that of RAP, which is the typical behavior in MgO and MgAl2O4 based MTJs.…”
mentioning
confidence: 95%
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“…The TMR ratio increases with reduced temperature, reaching 914% at 3 K. This LT value is much larger than typical Fe/MgO/Fe (250~370%). 4,24,25,31 We obtained the effective tunneling spin polarization at LT (P0) to be 0.905 using the Jullière equation: TMR = 2𝑃 /(1  𝑃 ), 36 suggesting close to half-metallic Δ1 states in our Fe/MgO/Fe structure. The temperature dependence of the TMR ratio is mainly determined by that of RAP, which is the typical behavior in MgO and MgAl2O4 based MTJs.…”
mentioning
confidence: 95%
“…The TMR ratio of Wafer-3 is slightly larger than that of Wafer-2, presumably owing to an improved bottom Fe quality; however, the main features, such as peak TMR ratio, oscillation peak positions, and the RA values are almost identical. MTJs, e.g., epitaxial Fe/MgO/Fe(001) ~219%, 25 epitaxial Fe/MgAl2O4/Fe(001) ~248%, 26 and textured FeB/MgO/FeB ~300%. 7 The star in Figs.…”
mentioning
confidence: 99%
“…Ferromagnetic materials are utilized as free/fixed layers in MgO-based MTJs. Crystalline (001) iron films were initially used as free/fixed layers in MgO-based MTJs to achieve an MR ratio of 220% [ 26 , 124 ] at the beginning of the 2000s. Subsequently, crystalline Co(001) films were employed as free/fixed layers of MgO-based MTJs, achieving an MR ratio of 410% [ 28 ].…”
Section: Introductionmentioning
confidence: 99%
“…A MTJ consists of two ferromagnetic conducting electrodes separated by a thin insulating layer such as MgO. In recent years, MgO-based MTJs with Fe, FeCo, and FeCoB as ferromagnetic electrodes have been widely investigated because of their exceptional magnetic properties [7][8][9][10][11][12][13][14][15][16][17][18][19], such as large perpendicular magnetic anisotropy (PMA) constant (K i ) and high tunnel magneto-resistance ratio, for high-performance spintronic applications toward low power consumption.…”
Section: Introductionmentioning
confidence: 99%
“…Although robust PMA has been experimentally observed at the Fe/MgO interface [7][8][9][10][20][21][22][23], there remain inconsistencies in the origin and magnitude of K i . An earlier computational study reported a very large K i up to 3 mJ m −2 at the Fe/MgO interface and concluded that the overlap between Fe 3d and O 2p orbitals and the orbital hybridization between d z 2 and d xz(yz) was responsible for the PMA [13].…”
Section: Introductionmentioning
confidence: 99%