Laser Ablation of Dielectric Layers and Formation of Local Al-BSF in Dielectric back Passivated Solar Cells

Bounaas, L.; Auriac, N.; Grange, Bernadette; Monna, R.; Pirot, M.; Vecchi, Sylvain De; Jourdan, J.; Mialon, S.; Pasquinelli, M.; Barakel, Damien

doi:10.1016/j.egypro.2013.07.331

Cited by 12 publications

(8 citation statements)

References 8 publications

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“…In general, laser doping using liquid or solid B as the B source and nanosecond (NS) laser result in doped regions with junction depths at the order of 2 lm or less (Hallam et al, 2015;Bounaas et al, 2013;Kray et al, 2008;Kim et al, 2014a;Green, 2015). Traditional B sources require a high energy to melt the Si substrate and a long time to maintain B diffusion; hence, NS laser is the best choice.…”

Section: Ps Laser Dopingmentioning

confidence: 99%

Si paste technology for high-efficiency solar cells

et al. 2016

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Section: Ps Laser Dopingmentioning

confidence: 99%

Si paste technology for high-efficiency solar cells

et al. 2016

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“…In PERC and Al-BSF solar cells, direct laser drilling of local openings in Al, AlO x , SiO 2 /SiN x , and AlO x /SiN x stack layers had been previously attempted with some laser-induced defects and passivation damages. Such local openings can be made by selective laser patterning of SiN x in H 3 PO 4 , AlO x and Al in KOH, and SiO 2 in KOH [65][66][67]. Wu et al showed the KOH etching process for bulk micromachining of 100 mm diameter (100) silicon substrate, SiO 2 , and SiN x passivation layers for the fabrication of high-temperature pressure sensors based on polycrystalline and single-crystalline 3C-SiC piezo-resistors [68], which are also achievable by selectively chemical-etching by laser patterning in KOH and H 3 PO 4 solutions.…”

Section: Direct Applicability Of Lhice Process To Diverse Semiconduct...mentioning

confidence: 99%

Microscale patterning of semiconductor c-Si by selective laser-heating induced KOH etching

Sinha¹,

Gupta²

2021

Semicond. Sci. Technol.

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Laser patterning has been used for the micro-scale fabrication of semiconductor devices like solar cells, photodetectors, LEDs, and also for modification of surfaces for wettability, reflected colors, initial bacterial adhesion, etc, due to its several advantages of patterning flexibility, spatial resolution, and mask-free operation over complex conventional lithography. Currently, laser-induced ablation is a promising patterning method in silicon solar cell fabrication; however, laser-induced defects, and thermal stresses remain a significant concern. In this paper, we demonstrate a laser ablation-free method for patterning c-Si based on the observation that the anisotropic etching of c-Si by KOH is highly temperature-dependent as the etching rate is about 100 times faster at 80 • C compared to room temperature. The laser heating-induced chemical etching (LHICE) of crystalline silicon can help alleviate such laser-induced damage by providing the necessary low temperature on the localized area(s) on the silicon substrate. We investigated the micro-second pulsed laser-assisted chemical etching of c-Si substrate for microscale patterning and showed that laser-induced damage could be eliminated as indicated by the minority carrier lifetime preservation. We also present results of the effect of laser processing parameters such as laser power, scan speed, and duty cycle on etching depth and surface morphology. The optical, surface morphology, depth profile, and LCPSim simulation results are also presented to optimize and understand the LHICE process. This versatile methodology of temperature-selective chemical etching could be applied to various thin-film and bulk materials used in diverse device fabrication.

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“…A more direct approach for front-surface metallisation can be achieved by UV laser ablation of a silicon nitride ARC for cells that that use this material as the ARC. [41][42][43][126][127][128][129][130] The process for inorganic layer ablation is similar to that described above for polymer ablation. Although a much simpler process than that described by Chaudhari and Solanki, some silicon damage can occur and so direct ARC ablation typically results in some loss in the pseudo fill factor if the cell's p-n junction is too shallow.…”

Section: Laser Ablationmentioning

confidence: 99%

Patterned masking using polymers: insights and developments from silicon photovoltaics

Lennon

2016

International Materials Reviews

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Patterning is fundamental to advancing most technologies. Although the challenge for electronic integrated circuits continues to be reduced feature size other applications have different requirements and challenges. This review contributes insights from silicon photovoltaics where patterning is required for selective doping etching and metallisation. Earlier silicon solar cell devices extensively used optical lithography to fabricate devices in the laboratory with high device efficiencies being achieved. However industrial cell fabrication has largely relied on uniformly doped silicon layers and lower resolution screen-printing for metal electrode formation because optical lithography is considered too expensive and slow. This has resulted in the average energy conversion efficiencies of industrially produced cells remaining on average 5% lower than the value of 25% reported in 1999 for cells patterned with optical lithography. Motivated by the goal of bridging this efficiency gap many new polymer patterning methods which do not require the formation of a qualified mask have been developed for different silicon solar cell designs. These polymer patterning methods fall into two general classes; (i) where the polymer mask is directly printed on the cell surface; and (ii) where a pattern is formed in a polymer layer using printers or lasers to effect the patterning. Many of the methods which are reviewed in this paper although developed with specific photovoltaic requirements in mind may also find applications in other fields of research and technology.

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Laser Ablation of Dielectric Layers and Formation of Local Al-BSF in Dielectric back Passivated Solar Cells

Cited by 12 publications

References 8 publications

Si paste technology for high-efficiency solar cells

Si paste technology for high-efficiency solar cells

Microscale patterning of semiconductor c-Si by selective laser-heating induced KOH etching

Patterned masking using polymers: insights and developments from silicon photovoltaics

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