Laser anneal of oxycarbosilane low-k film

Abstract

Abstract-Submilisecondlaser anneal has been experimentally investigated for porogen removal and its ability to improve the mechanical strength in oxycarbosilane ultra low-k films compromised due to the introduction of porosity. We report the occurrence of extensive bond rearrangements inferred from Fourier-transform infra-red (FTIR) spectroscopy, elastic recoil detection (ERD) and spectroscopic ellipsometry (SE) in the energy range of 1.4-8 eV. The laser anneal affects most notably the organic content of the organosilicate matrix leading to depletion and reorganization. Nevertheless, the tested conditions reveal a processing window which allows for 13% improvement of Young's modulus as compared to the reference film, annealed in a conventional furnace at 400°C for 2 h, while not impacting the relative dielectric constant of 2.25.