Laser annealing of plasma implanted boron for ultra-shallow junctions in Silicon

Florakis, A.; Tsoukalas, D.; Zergioti, I.; Giannakopoulos, K.; Dimitrakis, P.; Papazoglou, D. G.; Bennassayag, G.; Bourdon, H.; Halimaoui, A.

doi:10.1016/j.nimb.2006.10.006

Cited by 5 publications

(2 citation statements)

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“…On an empirical basis, multiple continuous-wave laser beam scans 51 or multiple pulses 45,46 are sometimes employed to mitigate problems with short-time annealing techniques. An alternative approach involves using two-step annealing protocols comprising laser irradiation in conjunction with furnace annealing 3 or conventional RTP.…”

Section: Discussionmentioning

confidence: 99%

“…This physical picture points to even further potential reductions in junction depth through methods that operate on even shorter time scales than flash annealing, such as annealing with scanned continuous-wave 43,44 or pulsed 45,46 lasers. However, the effects of very fast methods on dopant activation complicate matters, as discussed further below.…”

Section: Effects Of Annealing Protocol On Boron Diffusionmentioning

confidence: 99%

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Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

Kwok

Braatz

Paul

et al. 2009

Journal of Applied Physics

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Millisecond annealing techniques with flash lamps or lasers have become increasingly common for activating dopants and eliminating implantation-induced damage after ion implantation for transistor junction formation in silicon. Empirical data show that such techniques confer significant benefits, but key physical mechanisms underlying these benefits are not well understood. The present work employs numerical simulation and analytical modeling to show that for boron, millisecond annealing reduces unwanted dopant spreading by greatly reducing the time for diffusion, which more than compensates for an increased concentration of Si interstitials that promote dopant spreading. Millisecond annealing also favorably alters the relative balance of boron interstitial sequestration by the crystal lattice vs interstitial clusters, which leads to improved electrical activation at depths just short of the junction.

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Section: Discussionmentioning

confidence: 99%