Laser annealing of sputter-deposited a-SiC and a-SiC x N y films

Fraga, Mariana Amorim; Massi, M.; Oliveira, I. C.; Origo, Fábio Dondeo; Miyakawa, Walter

doi:10.1007/s12034-011-0331-x

Cited by 3 publications

(2 citation statements)

References 15 publications

(11 reference statements)

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“…The SEM observation (Figure 1) conducted on the sample indicated a smoother, and more uniform, surface with good adhesion to the substrate. These results agreed with most other reports [6]. Generally speaking, the surface morphology of the sample varied slightly under different power inputs(90 W, 120 W, 150 W, 180 W).…”

Section: Resultssupporting

confidence: 92%

The Photoluminescence Spectra Research of SiC Thin Film under Different Sputtering Powers

Zhao

et al. 2019

SSP

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This study prepared an SiC thin film by using the ratio frequency magnetron sputtering method, investigated the effects of different sputtering powers on the SiC material and analysed the changes in crystal morphology and photoluminescence characteristics caused by changes in the growth conditions used. It was considered that there was 6H-SiC crystal morphologies in the SiC thin film under the experimental conditions prevailing in this study. The SiC morphologies with small grain sizes intermingled and therefore formed anSiC thin film. The analyses of the photoluminescence spectra and Scanning Electron Microscope indicated that the SiC thin film materials with preferable crystal compositions could be prepared under appropriate power inputs.

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Section: Resultssupporting

confidence: 92%

The Photoluminescence Spectra Research of SiC Thin Film under Different Sputtering Powers

Zhao

et al. 2019

SSP

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“…The relatively intensive bands absorbing near 802?7 and 1090?3 cm 21 are due to Si-C and Si-O bonds respectively. 16,17 The research of FTIR pattern and EDX suggests that the main composition of the interlayer film is SiC, and the interlayer film also contains a small amount of SiO 2 . Figure 4 shows the XRD patterns of the WC-Co inserts with and without as fabricated interlayer in the 2h range from 20 to 90u.…”

Section: Resultsmentioning

confidence: 99%

Diamond deposition on WC–Co substrate with amorphous SiC interlayer

Cui

Shen

Sun

2014

Surface Engineering

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An amorphous SiC (a-SiC) thin film is deposited on the WC-Co insert from dimethyldiethoxysilane/ hydrogen gas mixture using hot filament chemical vapour deposition (HFCVD) technique. Energy dispersive X-ray spectroscopy, scanning electron microscope, Fourier transform infrared spectroscopy, X-ray diffraction spectroscopy and transmission electron microscope are used to characterise the as fabricated a-SiC thin film. Subsequently, the a-SiC film is used as an intermediate film, and an adherent top layer of CVD diamond with well faceted crystallites is synthesised on the a-SiC interlayer. Rockwell indentation tests indicate that the CVD diamond film with a-SiC interlayer results in less delamination in comparison with that directly deposited on WC-Co substrate. The multilayer (a-SiCzdiamond) film coated insert exhibits better cutting performance and longer lifetime than the CVD diamond coated insert with no interlayer in dry turning of Al-Si alloy. By introducing the a-SiC interlayer, the adhesion and wear endurance of diamond film on WC-Co substrate can be dramatically improved.

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