Laser‐Assisted Atomic Layer Deposition of Boron Nitride Thin Films

Olander, Jenny; Ottosson, L. Mikael; Heszler, Péter; Carlsson, Jan; Larsson, Karin

doi:10.1002/cvde.200506365

Cited by 38 publications

(39 citation statements)

References 27 publications

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“…The related increase in reactivity and/or the enhancement of the adsorption behavior largely affect the film formation. With respect to ALD, the photo-assisted ALD of tantalum oxide 19,20 and boron nitride 21 thin films using an UV lamp and an ArF laser, respectively, has been reported in literature. Compared to thermal ALD, the application of UV light has led to a higher growth rate, a broadening of the ALD window towards lower temperatures, and partially different film properties.…”

Section: Literature Reviewmentioning

confidence: 99%

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Henke

Knaut

Hoßbach

et al. 2015

ECS J. Solid State Sci. Technol.

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Within this work, flash lamp annealing (FLA) is utilized to thermally enhance the film growth in atomic layer deposition (ALD). First, the basic principles of this flash-enhanced ALD (FEALD) are presented in detail, the technology is reviewed and classified. Thereafter, results of our studies on the FEALD of aluminum-based and ruthenium thin films are presented. These depositions were realized by periodically flashing on a substrate during the precursor exposure. In both cases, the film growth is induced by the flash heating and the processes exhibit typical ALD characteristics such as layer-by-layer growth and growth rates smaller than one Å/cycle. The obtained relations between process parameters and film growth parameters are discussed with the main focus on the impact of the FLA-caused temperature profile on the film growth. Similar, substrate-dependent growth rates are attributed to the different optical characteristics of the applied substrates. Regarding the ruthenium deposition, a single-source process was realized. It was also successfully applied to significantly enhance the nucleation behavior in order to overcome substrate-inhibited film growth. Besides, this work addresses technical challenges for the practical realization of this film deposition method and demonstrates the potential of this technology to extend the capabilities of thermal ALD. Atomic layer deposition (ALD) is a specific thin film deposition method wherein film growth is based on a sequence of alternating saturated surface reactions. In a typical ALD process, this is realized by the alternating exposure of the substrate surface to two precursors, which are separated from each other by inert gas purging or chamber evacuation in order to prevent gas phase reactions. As a result, the film growth proceeds in a self-limiting manner and monolayer-by-monolayer, and thus, ALD enables the deposition of thin films with excellent uniformity and conformality as well as with sub-nanometer thickness control. Thanks to these unique characteristics, ALD has emerged as an important thin film deposition technique in semiconductor technology, e.g. in the fabrication of metal-insulator-metal (MIM) film stacks in high aspect ratio dynamic random access memory (DRAM) structures and gate dielectrics in transistors. In recent years, the use of ALD has also expanded into other fields such as optoelectronics, energy conversion and storage devices, micro-electro-mechanical-systems (MEMS) and nanotechnology. [1][2][3][4][5][6] Although a large number of materials have been deposited by ALD so far 1-6 for various applications, there are still a number of challenges in ALD. The deposition temperatures in ALD are mostly lower compared to chemical vapor deposition (CVD) processes due to the different mechanisms of film growth and the necessity to prevent precursor decomposition in order to keep the self-limiting growth behavior of ALD. As a consequence of the lower energy available for film formation, the films may not meet the properties required for the specific...

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Section: Literature Reviewmentioning

confidence: 99%

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Henke

Knaut

Hoßbach

et al. 2015

ECS J. Solid State Sci. Technol.

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“…For example, organometallic boron compounds, such as triethylboron, have been employed as reducing agents in the ALD of WN x C y thin films from WF 6 and NH 3 precursors [32][33][34]. Also BBr 3 and NH 3 have been recently used for ALD of BN thin films at 600°C [27]. The suitability of boron tribromide for selflimiting reactions with water has been earlier demonstrated on the surface of bulk silica gel powders at 180°C [35].…”

Section: Introductionmentioning

confidence: 99%

“…In was observed, however, in the case of the well-known (CH 3 ) 3 Al/H 2 O process for Al 2 O 3 that impurity contents of films significantly increase as the deposition temperature is decreased. In low-temperature ALD processes in the absence of sufficient thermal activation the reactions sometimes need to be promoted by plasma [18], laser [27] or catalysts [25].…”

Section: Introductionmentioning

confidence: 99%

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Atomic layer deposition of B2O3 thin films at room temperature

Putkonen¹,

Niinistö²

2006

Thin Solid Films

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“…It is used in several applications, for example, as a protective layer on surfaces [1][2][3][4][5][6][7], as a substrate [8][9][10][11][12][13][14], as an additive in engine oils and plastics [15][16][17][18], and as a solid lubricant [19]. Various surfaces can be coated by h-BN [1][2][3][4][5][6][7][8], including Cu [1,2,8], Rh [4], Ni [6], and Pd [5,7]. Low friction properties are achieved with thin film coatings [1,2,8].…”

Section: Introductionmentioning

confidence: 99%

Friction and a Tribochemical Reaction between Ice and Hexagonal Boron Nitride: A Theoretical Study

2008

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Friction between ice-Ih and hexagonal boron nitride (h-BN) has been determined by periodic ab initio calculations. Surfaces of ice-Ih and h-BN were brought into sliding contact, and the interaction energies were calculated as a function of interplanar distance and lateral displacement of the surfaces. The friction between the surfaces was calculated from the interaction energies, producing a friction coefficient of 0.140. Friction is further influenced at high loads by a tribochemical reaction between ice-Ih and h-BN.

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Laser‐Assisted Atomic Layer Deposition of Boron Nitride Thin Films

Cited by 38 publications

References 27 publications

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Atomic layer deposition of B2O3 thin films at room temperature

Friction and a Tribochemical Reaction between Ice and Hexagonal Boron Nitride: A Theoretical Study

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