2000
DOI: 10.1021/cm9907209
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Laser-Assisted Room-Temperature Film Growth Using a Constrained Pulsed Nozzle Expansion

Abstract: Results are presented on a method that uses laser-assisted reactivity in a constrained gas expansion to facilitate film growth. The 193 nm output of an ArF excimer laser is focused through a hole in a substrate into a gas pulse consisting of trimethylamine−alane (TMMA). As shown by mass spectral data, laser irradiation of the TMAA clearly results in significant gas-phase reactivity. While no discernible film growth takes place in the absence of laser radiation, the laser readily brings about film growth on a s… Show more

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Cited by 6 publications
(1 citation statement)
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“…At the heart of the MOCVD field lies a rich but complicated chemistry. Important molecular questions remain regarding the reactivity of gas−gas, gas−surface, and surface−surface species in growth environments, particularly for materials such as AlN or GaN. , Although laser-assisted film growth has been previously studied in our laboratory, it is not the primary subject of this paper. Rather, in the current work an excimer laser is used to initiate chemistry in a clustering, reactive environment.…”
Section: Introductionmentioning
confidence: 99%
“…At the heart of the MOCVD field lies a rich but complicated chemistry. Important molecular questions remain regarding the reactivity of gas−gas, gas−surface, and surface−surface species in growth environments, particularly for materials such as AlN or GaN. , Although laser-assisted film growth has been previously studied in our laboratory, it is not the primary subject of this paper. Rather, in the current work an excimer laser is used to initiate chemistry in a clustering, reactive environment.…”
Section: Introductionmentioning
confidence: 99%