Laser control processes in solids

Mirzoev, F. Kh.; Panchenko, V. Ya.; Shelepin, L. A.

doi:10.3367/ufnr.0166.199601a.0003

Cited by 39 publications

(5 citation statements)

References 57 publications

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“…This stress distribution can influence the motion of the impurities during the diffusion processes and the sharp distribution of the impurities that are observed during diffusion processes. For example, the sharp distribution of buried Ge layers in silicon [18] could be explained as the action of the field of stress as discussed above.…”

Section: Resultsmentioning

confidence: 99%

“…A standard TRIM (TRansport of Ions in Matter) program [16] was used to define both the ion-distribution function and the defectdistribution function. [17,18]) from ( 1) and ( 2), it can be seen that compressive stress dominates in the ion-implanted region. The integrated stress that is measured experimentally from the curvature measurements of the ion-implanted beam (by the cantilever technique) is defined as…”

Section: The Model Of Ion-induced Strain and Stressmentioning

confidence: 95%

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Integral stress in ion-implanted silicon

Tamulevičius¹,

Požėla²,

Jankauskas³

1998

J. Phys. D: Appl. Phys.

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A theoretical model of production and relaxation of stress in ion-implanted silicon is proposed. It is based on the assumptions that the point defects are the source of mechanical stress and that the relaxation of stress is due to the viscous flow of ion-irradiated silicon. The integrated stress acting in a damaged layer has been studied as a function of the -ion current density j = 0.01-, ion energy -160 keV, substrate temperature T = 78-500 K and dose in the range up to . It was shown that the maximum integral stress values induced in silicon are of the order of 100 N . The maximum is reached at a dose of about that corresponds to the silicon-amorphization dose. Stress due to implanted ions is essential for the high-dose region and it dominates at high temperatures of the substrate.

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Section: Resultsmentioning

confidence: 99%

Section: The Model Of Ion-induced Strain and Stressmentioning

confidence: 95%

Integral stress in ion-implanted silicon

Tamulevičius¹,

Požėla²,

Jankauskas³

1998

J. Phys. D: Appl. Phys.

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“…Depending on the beam intensity and pulse duration, both reversible and irreversible matter states can be induced in a variety of inorganic materials (London et al, 2001;Hau-Riege, 2012). This is not surprising; indeed similar concepts have been extensively investigated in the field of high-power laser irradiation, where both thermal and non-thermal effects are currently exploited in many laser-based technological processes (Mirzoev et al, 1996;Liu et al, 1997).…”

Section: Introductionmentioning

confidence: 92%

Time and space resolved modelling of the heating induced by synchrotron X-ray nanobeams

Bonino¹,

Torsello²,

Prestipino³

et al. 2020

J Synchrotron Radiat

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X-ray synchrotron sources, possessing high power density, nanometric spot size and short pulse duration, are extending their application frontiers up to the exploration of direct matter modification. In this field, the use of atomistic and continuum models is now becoming fundamental in the simulation of the photoinduced excitation states and eventually in the phase transition triggered by intense X-rays. In this work, the X-ray heating phenomenon is studied by coupling the Monte Carlo method (MC) with the Fourier heat equation, to first calculate the distribution of the energy absorbed by the systems and finally to predict the heating distribution and evolution. The results of the proposed model are also compared with those obtained removing the explicit definition of the energy distribution, as calculated by the MC. A good approximation of experimental thermal measurements produced irradiating a millimetric glass bead is found for both of the proposed models. A further step towards more complex systems is carried out, including in the models the different time patterns of the source, as determined by the filling modes of the synchrotron storage ring. The two models are applied in three prediction cases, in which the heating produced in Bi2Sr2CaCu2O8+δ microcrystals by means of nanopatterning experiments with intense hard X-ray nanobeams is calculated. It is demonstrated that the temperature evolution is strictly connected to the filling mode of the storage ring. By coupling the MC with the heat equation, X-ray pulses that are 48 ps long, possessing an instantaneous photon flux of ∼44 × 1013 photons s−1, were found to be able to induce a maximum temperature increase of 42 K, after a time of 350 ps. Inversely, by ignoring the energy redistribution calculated with the MC, peaks temperatures up to hundreds of degrees higher were found. These results highlight the importance of the energy redistribution operated by primary and secondary electrons in the theoretical simulation of the X-ray heating effects.

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“…где u i -компоненты вектора перемещений, σ i jкомпоненты тензора напряжений, = T − T 0 , T 0 -начальная температура среды, T -текущая температура, κ -коэффициент теплопроводности, ρ -плотность материала, S -энтропия единицы объема среды, следует добавить кинетические уравнения, описывающие изменение числа точечных дефектов в единице объема [1]:…”

Section: постановка задачиunclassified

“…При воздействии на материал лазерного излучения или потока частиц (например, при ионной имплантации) в нем создаются точечные дефекты (вакансии, межузлия) [1]. Прохождение интенсивной продольной акустической волны способствует изменению в областях растяжения и сжатия энергии активации образования точечных дефектов, приводя к их пространственному перераспределению.…”

Section: Introductionunclassified

Ударные Волны В Термоупругой Среде С Точечными Дефектами

Ерофеев¹,

Леонтьева²,

Шекоян³

2020

Журнал Технической Физики

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The propagation of plane longitudinal waves in an infinite medium with point defects located in a non-stationary inhomogeneous temperature field is studied. A self-consistent problem is considered, taking into account both the influence of an acoustic wave on the formation and movement of defects, and the influence of defects on the propagation features of an acoustic wave. It is shown that in the absence of heat diffusion, the system of equations reduces to a nonlinear evolution equation with respect to the displacements of the particles of the medium. The equation can be considered a formal generalization of the Korteweg-de Vries-Burgers equation. By the method of truncated decompositions, an exact solution of the evolution equation in the form of a stationary shock wave with a monotonic decrease has been found. It is noted that dissipative effects due to the presence of defects prevail over the dispersion associated with the migration of defects in the medium.

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Laser control processes in solids

Cited by 39 publications

References 57 publications

Integral stress in ion-implanted silicon

Integral stress in ion-implanted silicon

Time and space resolved modelling of the heating induced by synchrotron X-ray nanobeams

Ударные Волны В Термоупругой Среде С Точечными Дефектами

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