Laser Diodes for Gas Sensing Emitting at 3.06 $\mu$m at Room Temperature

Belahsene, S.; Naehle, Lars; Fischer, M.; Koeth, Johannes; Boissier, G.; Grech, P.; Narcy, G.; Vicet, A.; Rouillard, Y.

doi:10.1109/lpt.2010.2049989

Cited by 23 publications

(7 citation statements)

References 14 publications

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“…Meanwhile, because of the inherent limitation of the materials used in the aforementioned platforms, the MIR lasing and detection remain as challenges for the silicon photonics. The most promising solution for MIR laser sources is to integrate the III-V quantum well (QW) lasers and quantum cascade lasers (QCLs) [68][69][70][71][72][73][74][75][76] to the silicon photonics platforms. While at the detection side, the detection structures based on GeSn alloy or III-V material are monolithically integrated to the silicon substrate to build up the MIR PDs [77][78][79][80].…”

Section: Introductionmentioning

confidence: 99%

Silicon photonic platforms for mid-infrared applications [Invited]

et al. 2017

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Silicon photonic integrated circuits for telecommunication and data centers have been well studied in the past decade, and now most related efforts have been progressing toward commercialization. Scaling up the silicon-oninsulator (SOI)-based device dimensions in order to extend the operation wavelength to the short mid-infrared (MIR) range (2-4 μm) is attracting research interest, owing to the host of potential applications in lab-on-chip sensors, free space communications, and much more. Other material systems and technology platforms, including silicon-on-silicon nitride, germanium-on-silicon, germanium-on-SOI, germanium-on-silicon nitride, sapphireon-silicon, SiGe alloy-on-silicon, and aluminum nitride-on-insulator are explored as well in order to realize low-loss waveguide devices for different MIR wavelengths. In this paper, we will comprehensively review silicon photonics for MIR applications, with regard to the state-of-the-art achievements from various device demonstrations in different material platforms by various groups. We will then introduce in detail of our institute's research and development efforts on the MIR photonic platforms as one case study. Meanwhile, we will discuss the integration schemes along with remaining challenges in devices (e.g., light source) and integration. A few application-oriented examples will be examined to illustrate the issues needing a critical solution toward the final production path (e.g., gas sensors). Finally, we will provide our assessment of the outlook of potential future research topics and engineering challenges along with opportunities.

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Section: Introductionmentioning

confidence: 99%

Silicon photonic platforms for mid-infrared applications [Invited]

et al. 2017

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“…One of the challenges that had to be addressed in this domain is to provide on-chip and low cost optical sources. It has been shown that group III-V compounds interband cascade and quantum cascade devices can provide MIR sources [6][7][8][9][10]. However, these compounds are not compatible to be efficiently grown onto the silicon platform which make the device manufacturing complicated and expensive.…”

Section: Introductionmentioning

confidence: 99%

Narrow-Band Thermal Photonic Crystal Emitter for Mid-Infrared Applications

2018

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Mid-infrared (MIR) on-chip sensing on Si has been a progressive topic of research in the recent years due to excitation of vibrational and rotational bands specific to materials in this range and their immunity against visible light and electromagnetic interferences. For on-chip applications, integration of all the optical components including the MIR source is crucial. In this work, we introduce a slab photonic crystal (PhC) thermal source where the birthplace and the filtering of the photons occur in the same region. Due to the forbidden frequency bands and high density of states in the band edge, it provides electric efficiency and filtering performance.

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“…In fact, within our work, we find that by also changing the barrier material and carefully optimizing the growth conditions of the new structure, a further shift of the emission wavelength may be achieved and high-performance lasers emitting above 2 lm are obtained while maintaining a binary InAs Qdash composition. The wavelength range around 2 lm is of particular interest as well as some important gases, such as CO 2 taking the advantage of the QW technology in Sb-based materials 13,14 or by utilizing type-II QWs on the InP(001) substrate, 15,16 during this work, we will focus our attention on InAs/InP Qdashes. Due to the fact that they can be grown self-assembled on InP(001) and related lattice-matched material, Qdashes can directly benefit from the growth and processing technologies that have been mastered through the development of telecommunications lasers, while, as compared to the latter approach of type-II QWs, they can maintain appreciably lower threshold current densities.…”

Section: Introductionmentioning

confidence: 99%

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

Papatryfonos

Saladukha

Merghem

et al. 2017

Journal of Applied Physics

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Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ∼ 40 cm−1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers

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Laser Diodes for Gas Sensing Emitting at 3.06 $\mu$m at Room Temperature

Cited by 23 publications

References 14 publications

Silicon photonic platforms for mid-infrared applications [Invited]

Silicon photonic platforms for mid-infrared applications [Invited]

Narrow-Band Thermal Photonic Crystal Emitter for Mid-Infrared Applications

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

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