Laser-induced damage studies in silicon and silicon-based photodetectors

Arora, V.; Dawar, A. L.

doi:10.1364/ao.35.007061

Cited by 42 publications

(15 citation statements)

References 19 publications

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“…Knowing that the laser-induced damage threshold (LIDT) of silicon for a nanosecond Nd:YAG laser is around 2-5 J∕cm 2 [21][22][23], we see that for all the considered spheres, the fluences on the surface sample are large enough to etch silicon. Due to the material response, the marking features are not the same as the computed full width at half maximum (Γ FWHM ).…”

Section: Photonic Jet Etching On Silicon Wafermentioning

confidence: 99%

Photonic jet breakthrough for direct laser microetching using nanosecond near-infrared laser

et al. 2014

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Nanosecond near-IR lasers are commonly used for industrial laser processing. In this paper, we demonstrate that a 70 μm diameter beam generated from a 5 W, 28 ns, near-IR (1064 nm) Nd:YAG laser can etch a silicon wafer with a lateral feature size as small as 1.3 μm. Surprisingly with this laser, microetching can also be achieved on glass, despite the low absorption of this material at this wavelength. This breakthrough is carried out in ambient air by using glass microspheres with diameters between 4 and 40 μm that generate a concentrated beam at their vicinity, a phenomenon referred to as a photonic jet. The roles of parameters such as laser fluence, pulse number, microsphere diameter, and distance between the microsphere and the sample are discussed. A good correlation has been observed between the computed photonic jet intensity distribution and the etched marks' geometry.

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Section: Photonic Jet Etching On Silicon Wafermentioning

confidence: 99%

Photonic jet breakthrough for direct laser microetching using nanosecond near-infrared laser

et al. 2014

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“…Arora and Dawar concluded that thermally‐induced stress and the generation of long‐lived traps are the most probable causes for laser damage in silicon. They formulated an equation to calculate the surface damage threshold energy and they found that this energy is influenced mainly by the pulse duration and the number of laser pulses that are incident on an area 27. Thermally‐induced stress was also found to create cracks at the surface 28.…”

Section: Introductionmentioning

confidence: 99%

Laser induced defects in laser doped solar cells

Hameiri

Puzzer

Mai

et al. 2010

Progress in Photovoltaics

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Laser doping offers a promising method to define selective emitters for solar cells. Its main advantage is the localised nature of the laser beam, which allows melting of the surface area without heating the bulk. The ability to perform this process over a dielectric film offers further benefits, such as the possibility of creating self‐aligned metallisation patterns simultaneously with the selective emitter formation. However, laser induced defects, contaminations and discontinuities in the selective emitter can reduce solar cell performance. In this work the influence of different dielectric films on defect formation is investigated. It was found that a thin oxide beneath the SiNx improves the implied open circuit voltage of the solar cells for a wide range of laser output powers. Fewer defects were observed when using this SiO2/SiNx stack compared to the standard single SiNx anti‐reflection coating layer. It was also found that the recrystallised silicon layer grows epitaxially according the substrate orientation. No dislocation or stacking faults were observed in deeper areas using transmission electron microscopy, although some defects were observed near the surface. Electron beam induced current images revealed discontinuities in junctions formed with high laser powers. We conclude that micro‐cracks create these discontinuities, which can potentially induce shunts. Finally, laser doped solar cells with a standard SiNx and with a double SiO2/SiNx stack layer as anti‐reflection coating were compared. An efficiency of 18.4% on a large area commercial grade p‐type CZ substrate was achieved. Copyright © 2010 John Wiley & Sons, Ltd.

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“…Thermal stress appears to be one of the most likely causes of laser-induced damage in silicon [8], which can create cracks at the silicon surface [9] and extend defects well into the bulk of the device [10], [11]. One approach to avoid defect generation is to perform the laser doping process prior to dielectric deposition and use an aligned metallisation process [6], [12], which may require the use of linear beam focusing to suppress defect generation [13].…”

Section: Introductionmentioning

confidence: 99%

Hydrogen passivation of laser-induced defects for silicon solar cells

Hallam

Sugianto

Mai

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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Hydrogen passivation of laser-induced defects is shown to be essential for the fabrication of laser doped solar cells. On first generation laser doped selective emitter solar cells where open circuit voltages are predominately limited by the full area back surface field, a 10 mV increase and 0.4 % increase in pseudo fill factor is observed through hydrogen passivation of defects generated during the laser doping process resulting in an efficiency gain of 0.35 % absolute. The passivation of such defects becomes of increasing importance when developing higher voltage devices, and can result in improvements on test structures up to 25 m V. On n-type PERT solar cells, an efficiency gain of 0.7 % absolute is demonstrated with increases in open circuit voltage and pseudo fillfactor by applying a short low temperature hydrogenation process incorporating minority carrier injection using only hydrogen within the device. This process is also shown to improve the rear surface passivation increasing the short circuit current density from long wavelengths 0.2 mA/cm 2 compared to that achieved using an Alneal process. Subsequently an average efficiency of 20.54 % is achieved.

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Laser-induced damage studies in silicon and silicon-based photodetectors

Cited by 42 publications

References 19 publications

Photonic jet breakthrough for direct laser microetching using nanosecond near-infrared laser

Photonic jet breakthrough for direct laser microetching using nanosecond near-infrared laser

Laser induced defects in laser doped solar cells

Hydrogen passivation of laser-induced defects for silicon solar cells

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