Laser-induced etching of CrO doped GaAs and wavelength dependent photoluminescence

The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The “etch suppression” area is well defined by the illumination spot, a feature that can be used to create heterogeneously etched regions with a high degree of control, shown here on patterned samples. Together with the studied self-limitation effect, the technique offers a way to determine the position of rolled-up micro- and nanotubes independently from the predefined lithographic pattern.

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Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

Costescu

Deneke

Thurmer

et al. 2009

Nanoscale Res Lett

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Wavelength dependent laser-induced etching of Cr-O doped GaAs: Morphology studies by SEM and AFM

et al. 2009

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The laser induced etching of semi-insulating GaAs 〈100〉 is carried out to create porous structure under super-and sub-bandgap photon illumination (hν). The etching mechanism is different for these separate illuminations where defect states play the key role in making distinction between these two processes. Separate models are proposed for both the cases to explain the etching efficiency. It is observed that under sub-bandgap photon illumination the etching process starts vigorously through the mediation of intermediate defect states. The defect states initiate the pits formation and subsequently pore propagation occurs due to asymmetric electric field in the pore. Formation of GaAs nanostructures is observed using scanning electron (SEM) and atomic force microscopy (AFM).

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Size-selective laser-induced etching of semi-insulating GaAs: Photoluminescence studies

Joshi

Islam

Mavi

et al. 2009

Physica E: Low-dimensional Systems and Nanostructures

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Laser-induced etching of CrO doped GaAs and wavelength dependent photoluminescence

Cited by 4 publications

References 22 publications

Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

Wavelength dependent laser-induced etching of Cr-O doped GaAs: Morphology studies by SEM and AFM

Size-selective laser-induced etching of semi-insulating GaAs: Photoluminescence studies

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