Laser-induced forward transfer of aluminium

Schultze, V.; Wagner, M.

doi:10.1016/0169-4332(91)90072-r

Cited by 62 publications

(17 citation statements)

References 8 publications

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“…The laser induced forward transfer (LIFT) process was developed by Bohandy 1 in 1986 with a strong phase of research during the 1990s. [2][3][4] The LIFT process transfers, e.g., thin metal layers from a glass support onto a substrate. A pulsed laser beam heats and melts the metal through the glass support.…”

mentioning

confidence: 99%

Physical model for the laser induced forward transfer process

Roder

Köhler

2012

Applied Physics Letters

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This paper presents a numerical model which describes the underlying physical processes during laser induced forward transfer. The laser induced forward transfer uses a pulsed laser to transfer thin layers from a transparent support to a substrate. The model predicts the threshold energies Eth as well as the blow-off time tblow, thus allowing a profound physical understanding of the transfer process. The good agreement of simulated with measured Eth and tblow of thin nickel layers demonstrates the accuracy of the model. The model shows that gasification of the soda-lime glass support is the main driving force of the transfer process.

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confidence: 99%

Physical model for the laser induced forward transfer process

Roder

Köhler

2012

Applied Physics Letters

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“…At this step, the process is accompanied by the loss of Al and the contact resistance of the local contact holes is high because of the incomplete alloying of Si and Al. At the next step, we transfer Al to the local contact holes using the laser‐induced forward transfer (LIFT) method to compensate the Al loss induced by the subthreshold LFC step . Lastly, we performed laser firing of transferred Al to enhance local BSF formation.…”

Section: Introductionmentioning

confidence: 99%

“…At the next step, we transfer Al to the local contact holes using the laser-induced forward transfer (LIFT) method to compensate the Al loss induced by the subthreshold LFC step. 18,22,23 Lastly, we performed laser firing of transferred Al to enhance local BSF formation.…”

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confidence: 99%

Modified laser‐fired contact process for efficient PERC solar cells

Choi

Jung

Park

et al. 2019

Progress in Photovoltaics

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A laser‐fired contact (LFC) process is one of the techniques for making local electrical contacts at the rear side of passivated emitter and rear cell (PERC) solar cells. In the LFC process, opening of the passivated dielectric layers and alloying of Si and Al need to be made in a single step laser process. For this reason, the LFC process is accompanied by the loss of Al and the laser damage to the Si wafer. In this study, we present a novel multistep LFC process combining the conventional LFC and laser‐induced forward transfer (LIFT) processes. The modified LFC scheme we proposed consists of three steps: (a) opening of the passivation layers and partial alloying of Al‐Si, (b) additional deposition of Al on the local contact holes, and (c) post laser firing of the transferred Al. Applying the modified LFC process to the PERC cells of 1.0 cm2 of area, we demonstrate the effective recombination velocity of the laser‐processed wafers can be remarkably reduced while maintaining the low contact resistance. The best of the PERC solar cell fabricated by the modified LFC process exhibited an efficiency of 19.5% while the conventional LFC‐PERC cell showed 18.6%. The efficiency gains of the modified LFC‐PERC cells was largely contributed by the enhanced open circuit voltage (Voc) and fill factor (FF).

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“…under atmospheric conditions, without the need for a vacuum (Bohandy et al, 1988). The LIFT technique gained acceptance in a short time and was used successfully for a wide variety of single element materials, mainly metals such as copper (Bohandy et al, 1988), vanadium (Mogyorósi et al, 1989), gold (Baseman et al, 1990;Bohandy et al, 1988), aluminum (Schultze & Wagner, 1991), tungsten (Kántor et al, 1994;Tóth et al, 1993), chromium (Zergioti et al, 1998a), nickel (Sano et al, 2002) and Ge/Se thin film structures (Tóth & Szörényi, 1991). Reports of LIFT for oxide compounds such as Al 2 O 3 (Greer & Parker, 1988), In 2 O 3 (Zergioti et al, 1998b), V 2 O 5 (Chakraborty et al, 2007) and YBa 2 Cu 3 O 7 high temperature superconductors (Fogarassy et al, 1989) are worth mentioning, although the quality of the transferred ceramics was not as good as those deposited by traditional film growth techniques.…”

Section: Understanding the Laser Transfer Processmentioning

confidence: 99%

Rapid Prototyping of Embedded Microelectronics by Laser Direct-Write

Piqué¹

2011

Rapid Prototyping Technology - Principles and Functional Requirements

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Laser-induced forward transfer of aluminium

Cited by 62 publications

References 8 publications

Physical model for the laser induced forward transfer process

Physical model for the laser induced forward transfer process

Modified laser‐fired contact process for efficient PERC solar cells

Rapid Prototyping of Embedded Microelectronics by Laser Direct-Write

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