Laser-induced implantation and diffusion of magnesium into silicon

Arutyunyan, V. M.; Akhoyan, A. P.; Adamyan, Z. N.; Barsegyan, R. S.

doi:10.1134/1.1349276

Cited by 7 publications

(4 citation statements)

References 6 publications

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“…A method called “laser implantation” of magnesium in a sample was proposed in ref. [28]. It included the deposition of a 0.2 μm Mg layer on a high‐resistance p ‐Si, which was followed by the subsequent irradiation of the surface with a high‐power laser.…”

Section: Review Of Doping Techniquesmentioning

confidence: 99%

“…Therefore, it appears that the effect observed in ref. [28] was due to the doping of crystals by some other (slowly diffusing) impurity.…”

Section: Ion Implantationmentioning

confidence: 99%

“…The effect of the PL of Si:Mg was recently reexamined. [46] Experiments were carried out using samples prepared from the highly enriched 28 Si as an initial material, which enabled the resolution of the fine structure of defects and impurity centers in the PL spectra. It was found that the spectrum at T ¼ 2.1 K can be resolved in five lines, see Figure 11.…”

Section: Isoelectronic Mg-mg Pairsmentioning

confidence: 99%

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Magnesium‐Related Donors in Silicon: State of the Art

Astrov

Portsel

Shuman

et al. 2022

Physica Status Solidi (a)

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The research interest in deep donors in silicon is due in particular to the quantum structure of such centers; these are promising for application in silicon photonics in the mid-IR range and quantum technologies. At interstitial lattice positions, magnesium atoms create double-charge deep donors. The review is an attempt to summarize the accumulated knowledge on properties of magnesium impurity in silicon. Among methods to obtain magnesium-doped silicon, there is focus on the impurity diffusion from the solid phase using the so-called sandwich method. Techniques to investigate samples include Hall effect measurements, optical absorption, luminescence spectroscopy, and others. The diffusivity of magnesium in silicon and stability of parameters of doped samples under heat treatment is discussed. The energy spectrum of the helium-like magnesium donor is considered in detail. Due to the interaction with other impurities, magnesium forms a variety of donor levels in silicon. These include complexes of Mg with substitutional acceptor atoms B, Al, Ga, In, interstitial Li, and oxygen, as well as numerous donors with a currently unknown nature. Some defects are similar to so-called thermal donors in silicon. The pairing of Mg atoms is proved in samples prepared from the isotope 28 Si-enriched silicon.

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Section: Review Of Doping Techniquesmentioning

confidence: 99%

“…Therefore, it appears that the effect observed in ref. [28] was due to the doping of crystals by some other (slowly diffusing) impurity.…”

Section: Ion Implantationmentioning

confidence: 99%

Section: Isoelectronic Mg-mg Pairsmentioning

confidence: 99%

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Magnesium‐Related Donors in Silicon: State of the Art

Astrov

Portsel

Shuman

et al. 2022

Physica Status Solidi (a)

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“…The defect processes of magnesium (Mg) in Si have been studied for numerous years [9][10][11][12][13]. From a technological viewpoint the interest is driven by the potential application of Mg-doped Si in photonic devices [14].…”

Section: Introductionmentioning

confidence: 99%

Mg diffusion in Si on a thermodynamic basis

Saltas

Chroneos

Vallianatos

2018

J Mater Sci: Mater Electron

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In the present work, magnesium diffusion in silicon studied recently in the temperature range 600-1200 °C (Astrov et al. in Phys Status Solidi A 214:1700192, 2017; Shuman et al. in Semiconductors 51:5, 2017) is investigated on the basis of the cBΩ thermodynamic model, which connects point defect parameters with the macroscopic elastic and expansion properties. The calculated activation Gibbs free energy, activation enthalpy, activation entropy, activation volume and activation specific heat of Mg diffusion exhibit non-linear temperature dependence, due to the anharmonic behavior of the isothermal bulk modulus of Si. The calculated activation enthalpy of diffusion (1.67-2.12 eV) is in agreement with the reported experimental value (1.83 ± 0.02 eV) of Mg diffusion in Si, whereas the calculated activation volume (60% of the mean atomic volume) is compatible with the reported interstitial diffusion of Mg impurities.

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