2015
DOI: 10.1016/j.optlastec.2014.12.016
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Laser-induced local profile transformation of multilayered graphene on a substrate

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Cited by 17 publications
(6 citation statements)
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“…If multiple pulsed laser fluence E was much lower than sin gle pulse ablation threshold for graphene E a = 0.25 J cm −2 [11] and below experimentally measured threshold of mechanical destruction (fracture) in multiple pulsed regime E m ≈ 0.08-0.085 J cm −2 , for sufficiently larger pulse number N ⩾ 10 5 we observed local graphene profile transformation, similar to what was observed earlier in [13,14]. As a rule, nanopits with depth up to 2 nm and lateral size close to but higher than beam focal spot diameter were formed.…”
Section: Resultssupporting
confidence: 89%
See 1 more Smart Citation
“…If multiple pulsed laser fluence E was much lower than sin gle pulse ablation threshold for graphene E a = 0.25 J cm −2 [11] and below experimentally measured threshold of mechanical destruction (fracture) in multiple pulsed regime E m ≈ 0.08-0.085 J cm −2 , for sufficiently larger pulse number N ⩾ 10 5 we observed local graphene profile transformation, similar to what was observed earlier in [13,14]. As a rule, nanopits with depth up to 2 nm and lateral size close to but higher than beam focal spot diameter were formed.…”
Section: Resultssupporting
confidence: 89%
“…Earlier we found [13] that multiplepulsed laser action by short (nanosecond) laser pulses can induce local gra phene profile transformation. In the case of low beam inten sity (below ablation and destruction threshold) and multiple pulsed irradiation nanopits with diameter slightly above irra diation spot size and depth about 1 nm were formed in gra phene sheets that were produced by defoliation technique and then transferred on SiO 2 /Si substrates.…”
Section: Introductionmentioning
confidence: 88%
“…In 2001, before single layer graphene was experimentally discovered, Jeschke et al [53] identified by means of molecular dynamics simulations a new ablation mechanism of thin graphite films at fluences below the threshold for the damage of graphite planes (∼170 mJ cm −2 ). The last decade much work has been done [54][55][56][57][58][59][60][61][62][63][64][65][66][67][68][69] for the optimization of fs laser patterning processes in graphene by investigating the dependence of ablation process on the fs laser exposure parameters (e.g. fluence, pulse energy, pulse duration, repetition rate, exposure time and scanning speed).…”
Section: Introductionmentioning
confidence: 99%
“…The dynamic behaviors of ion beams released from gold, silver, silicon, graphene, and stainless steel plasmas at various laser pulse durations have been reported. [24][25][26][27][28] In this work, the W ion source and high current signal under applied DPLAS geometry are generated for the first time. Farid et al [16] focused only on a single-pulse Nd:YAG laser ablation with an energy of 300 mJ at 1064 nm, 160 mJ at 532 nm, and 85 mJ at 355 nm, separately.…”
Section: Introductionmentioning
confidence: 99%