Laser-induced sputtered neutral mass spectrometry study of arsenic concentration profiles in a polycrystalline silicon/single-crystal silicon system

Abstract

Arsenic concentration profiles in a polycrystalline silicon/single-crystal silicon system were investigated by sputtered neutral mass spectrometry using a high-repetition-rate excimer laser. Beforehand, the arsenic profile in a SiO2/Si sample was measured to verify that this method can provide accurate profiles, unlike secondary ion mass spectrometry. The 300-nm polycrystalline silicon film was implanted with 5×1016 As ions cm−2 at 100 keV and then annealed at 850 °C for 30 min. The arsenic segregation at the polycrystalline silicon/single-crystal silicon interface was indisputably confirmed and the amount was accurately determined to be 2.2×1015 cm−2.

Quantitative depth profiling of boron in shallow BF+2-implanted silicon by using laser-ionization sputtered neutral mass spectrometry

“…3 Sputtered neutral mass spectrometry ͑SNMS͒, which is related to SIMS, is expected to quantitatively complement SIMS. 9,10 In this article, we present quantitative ''dynamic laser-ionization SNMS'' measurements of dopant depth profiles in ultrashallow regions. Consequently, the neutral intensities are approximately proportional to the actual concentration; SNMS thus provides highly accurate depth profiles without being influenced by the matrices ͑''matrix-effect free''͒.…”