Laser light spot mapping of depletion in power semiconductor devices

Lindsay, Stuart

doi:10.1002/pssa.2210530136

Cited by 12 publications

(1 citation statement)

References 17 publications

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“…in [j], the order of magiiitude for Q E H / q was 10" elementary charges per cm2 and no rallies for the conceiitrations of interface trap states D,, were given in that papers. Measurements of breakdown voltages a t glass-passivated diodes as a function of design and processing parameters in [Cij and light-spot scanning mapping of depleted regions in [7] gave only qualitative results concerning interface charges. The influence of additives (Na, F) on interface charge and device stability was investigated in C-V methods are extensively used for exploring electrical propel ties of semiconductor-insulator interfaces.…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Silicon/Lead Boro-Alumino-Silicate Glass Interfaces. Insulator Charge and Distribution of Interface States Studied by Photovoltage Measurements

Heilig¹,

Kolbig²,

Reineke³

1989

Phys. Stat. Sol. (a)

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Interface states and insulator charges are investigated in the system silicon/lead boro‐alumino‐silicate glass. A special (detachable) MIS system is used. From a single large‐signal photovoltage pulse the surface potential of Si is determined. The energetic distribution Dit(E of rechargeable interface states could be obtained by such measurements with field modulation. With and without interlayers of CVD‐SiO2 U‐shaped distributions Dit(E) are found. Both for n‐ and p‐type Si depletion is observed at lead glass/Si interfaces; minimum values of Dit are 7 × 1011 cm−2 eV−1. Fixed charges in the glass could be caleulated from experimental results. Positive and negative values, depending on the composition of the glass, are found. The nature of the centres and Fermi level pinning are discussed shortly.

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Section: Introductionmentioning

confidence: 99%

Electrical Properties of Silicon/Lead Boro-Alumino-Silicate Glass Interfaces. Insulator Charge and Distribution of Interface States Studied by Photovoltage Measurements

Heilig¹,

Kolbig²,

Reineke³

1989

Phys. Stat. Sol. (a)

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The sublinear behavior of electron‐beam and photo‐induced currents in a p‐n junction as a test of injection levels

Davldson

Innes

Lindsay

1981

Physica Status Solidi (b)

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Both electron-beam (EBIC) and photo( PCbinduced currents in p-n junctions show a sublinear dependence on beam power at high electron or photon densities /l/. In this note we account for this phenomenon, and point out that it provides a simple method for measuring the injection conditions in an EBIC or PC experiment. It is essential to know whether high o r low level injection conditions pertain when these techniques are used to measure c a r r i e r lifetimes /I/.The departure from a linear dependence of the induced short-circuit current, i is greater in diameter than the depletion region width, and we believe the observed f a l l off to be well accounted for by the phenomenon of base region spreading at high current densities /2/. Base region spreading (with attendant narrowing of the depletion region) occurs when the mobile c a r r i e r density exceeds the background doping density. Although the magnitude of this effect has been calculated for the case of c a r r i e r s injected by the junction itself in a transistor /2/ it is reasonable to suppose that a similar mechanism operates when the c a r r i e r s a r e externally injected, a s in the EBIC o r PC experiments. Indeed assuming that the depletion region narrowing is the sole cause of the sublinear behavior of isc leads t o a satisfactory agreement between our calculated and measured values of i on the incident power level, Pi, occurs when the illuminating beam sc , (displayed in Fig. 1) over a wide range of beam powers. + -+ scThe experimental data for isc were obtained using a BYXn n n p silicon power rectifier. This device is gold doped, and spreading resistance measurements indicate a resistivity in the vicinity of the junction (n-region) of 500 Qcm. 1)

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Measurement methods, part B

Landolt-Börnstein - Group III Condensed Matter

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Laser light spot mapping of depletion in power semiconductor devices

Cited by 12 publications

References 17 publications

Electrical Properties of Silicon/Lead Boro-Alumino-Silicate Glass Interfaces. Insulator Charge and Distribution of Interface States Studied by Photovoltage Measurements

Electrical Properties of Silicon/Lead Boro-Alumino-Silicate Glass Interfaces. Insulator Charge and Distribution of Interface States Studied by Photovoltage Measurements

The sublinear behavior of electron‐beam and photo‐induced currents in a p‐n junction as a test of injection levels

Measurement methods, part B

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