Laser material processing in microelectronics manufacturing: status and near-term opportunities

Dunsky, Corey M.

doi:10.1117/12.600913

Cited by 21 publications

(8 citation statements)

References 4 publications

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“…145,146 Lasers have been steadily employed for silicon micromachining to replace conventional subtractive methods over the last decade. Dunsky, 147 Marinov et al, 60 and Hong et al 155 stated that laser dicing have the potential to replace mechanical blade dicing as the next generation ultrathin wafer singulation method owing to its potential to provide higher cutting speed, lower damage, and smaller kerf width but various technical challenges still remain to be solved. The high cost of ownership of a laser dicing system and its low material removal rate makes laser dicing more competitive for ultrathin wafers.…”

Section: Laser Dicingmentioning

confidence: 98%

Ultrathin Wafer Pre-Assembly and Assembly Process Technologies: A Review

Marks

Hassan

Cheong

2015

Critical Reviews in Solid State and Materials Sciences

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Ultrathin silicon wafer technology is reviewed in terms of the semiconductor applications, critical challenges, and wafer pre-assembly and assembly process technologies and their underlying mechanisms. Mechanical backgrinding has been the standard process for wafer thinning in the semiconductor industry owing to its low cost and productivity. As the thickness requirement of wafers is reduced to below 100 mm, many challenges are being faced due to wafer/die bow, mechanical strength, wafer handling, total thickness variation (TTV), dicing, and packaging assembly. Various ultrathin wafer processing and assembly technologies have been developed to address these challenges. These include wafer carrier systems to handle ultrathin wafers; backgrinding subsurface damage and surface roughness reduction, and post-grinding treatment to increase wafer/die strength; improved wafer carrier flatness and backgrinding auto-TTV control to improve TTV; wafer dicing technologies to reduce die sidewall damage to increase die strength; and assembly methods for die pick-up, die transfer, die attachment, and wire bonding. Where applicable, current process issues and limitations, and future work needed are highlighted.

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Section: Laser Dicingmentioning

confidence: 98%

Ultrathin Wafer Pre-Assembly and Assembly Process Technologies: A Review

Marks

Hassan

Cheong

2015

Critical Reviews in Solid State and Materials Sciences

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“…Opposite to conventional approaches, the laser scribing technology is a non-contact process which produces superior process results with narrow cut widths and less chipping and cracking, which greatly improves the process yields and die quality [5]. Recent advancement in laser scribing technology also enables precise positioning of laser scribe cuts with highly automated process control, thereby increasing the overall process throughput while lowering the manufacturing cost [6]. Thus laser scribing has become a key enabling technology in LED industry which provides great advantages of high throughput, high process yield, and low cost over conventional die separation methods.…”

Section: Introductionmentioning

confidence: 98%

Multiphysical Simulation of ns-Laser Ablation of Multi-material LED-structures

et al. 2014

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Structuring of multilayer stacks with ns-laser pulses is widely used in the industrial production of LEDs. These stacks are built up from several different materials each one layered upon each other. In order to thoroughly understand the physics of the structuring process a multiphysical simulation model has been developed. This model is capable to handle the beam propagation and the energy coupling into the work piece both for transparent and for absorbing materials as well as phase transitions (melting, solidifying, evaporation, condensation) of multiple different materials within the calculation domain. Furthermore a modified volume of fluid approach has been developed to calculate the material and energy flow within both the liquid and vapor phases and thus to track the free surface of the material during laser ablation. The paper gives an insight into this model illuminating the physical background of the ablation process and shows the excellent correspondence of the simulations with experimentally obtained results.

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“…Important laser processing application segments, including laser memory repair, ultraviolet laser microvia drilling, laser micromachining of semiconductors and solar cells, continue to demand advanced generation pulsed laser sources [1,2]. While Q-switched solid state lasers operating in the nanosecond regime continue to dominate many application segments, pulsed fiber sources are increasingly finding important niches, particularly for non-polarized, near infrared applications such as laser marking and laser welding.…”

Section: Introductionmentioning

confidence: 99%

Tandem photonic amplifier employing a pulsed master oscillator fiber power amplifier with programmable temporal pulse shape capability

et al. 2008

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We report on recent advances in the development of a 1064 nm pulsed master oscillator fiber power amplifier (MOFPA) with integrated modulators enabling programmable temporal pulse shapes and its employment in a tandem photonic amplifier. The MOFPA amplifier chain is seeded by a laser diode operated in the CW regime, yielding very stable spectral characteristics that are independent of the pulse repetition rate and pulse shape. The use of 3 GHz integrated LiNbO3 electro-optic modulators in conjunction with high speed digital electronics results in an excellent pulse shaping capability, a fine pulse amplitude stability and high repetition rate operation (100 kHz-1MHz) with fast rise times (<1ns). Energy per pulse of 8-10 µJ with good beam quality characteristics are obtained using advanced large mode area (LMA) fiber designs in the final power amplifier stage. The output is linearly polarized with a spectral bandwidth of < 0.1 nm. When employed in a tandem amplifier configuration, in which the MOFPA output is input to a single-stage, single-pass Nd:YVO 4 amplifier pumped by a single 30 W fiber-coupled 808 nm diode, a 600 mW average power at 100 KHz signal input from the MOFPA was amplified to 6 W with faithful amplification of the input temporal pulse profile while achieving excellent beam quality (M 2 <1.1) and pulse amplitude stability (< ±3%, 3σ). A model of tandem amplifier performance shows good agreement with experimental results and indicates prospective performance of advanced tandem photonic amplifier configurations.

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Laser material processing in microelectronics manufacturing: status and near-term opportunities

Cited by 21 publications

References 4 publications

Ultrathin Wafer Pre-Assembly and Assembly Process Technologies: A Review

Ultrathin Wafer Pre-Assembly and Assembly Process Technologies: A Review

Multiphysical Simulation of ns-Laser Ablation of Multi-material LED-structures

Tandem photonic amplifier employing a pulsed master oscillator fiber power amplifier with programmable temporal pulse shape capability

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