Laser microstructuring of Si surfaces for low-threshold field-electron emission

Zorba, Vassilia; Alexandrou, I.; Zergioti, I.; Manousaki, A.; Ducati, Caterina; Neumeister, A.; Fotakis, C.; Amaratunga, G.A.J.

doi:10.1016/j.tsf.2003.11.144

Cited by 51 publications

(23 citation statements)

References 7 publications

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“…The mean turn-on field of SiC is only 2.0 ± 0.2 V/µm, lower than that of Si which is 3.0 ± 0.3 V/µm, at the same irradiation conditions. The latter is close to the lowest values reported for Si spikes [7][8][9]. Current saturation occurs at a density of roughly 10 µA/cm 2 for all samples.…”

Section: Methodssupporting

confidence: 87%

“…Irradiation was performed at normal incidence under three different environments: a) SF 6 , which is known to give sharp structures in Si [9] b) ambient air conditions and c) a vacuum of ~ 10 -2 Torr. A detailed description of the experimental setup can be found elsewhere [8]. The micro-structured surfaces were 2x2 mm 2 in size and were morphologically characterized with the use of a scanning electron microscope (SEM).…”

Section: Methodsmentioning

confidence: 99%

“…Recently, progress was achieved for the one-step production of self-organized quasi periodical microtip arrays, through the pulsed laser irradiation of Si surfaces in the presence of a reactive gas, usually SF 6 [5,6]. This technique yields silicon cold electron sources which are competitive to those fabricated by other methods, regarding field emission threshold and emission efficiency [7][8][9].…”

mentioning

confidence: 99%

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Ultraviolet laser structuring of silicon carbide for cold cathode applications

Spanakis

Dialektos

Stratakis

et al. 2008

Phys. Status Solidi (c)

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We present results of the first attempt to produce arrays of sharp Silicon Carbide (SiC) electron emitters by ultraviolet pulsed‐laser processing of single‐crystal SiC surfaces. This simple one‐step technique, performed under controlled pressure of a reactive gas, has demonstrated efficient silicon cold cathodes both in terms of current density and of emission threshold. SiC has been found to produce the best emitters when treated in air. The corresponding cathodes have a lower emission threshold and produce higher current densities than their Si‐based counterparts. The role of surface morphology on the electron emission properties obtained is discussed in comparison to silicon. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodssupporting

confidence: 87%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

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Ultraviolet laser structuring of silicon carbide for cold cathode applications

Spanakis

Dialektos

Stratakis

et al. 2008

Phys. Status Solidi (c)

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“…Drilling and cutting of transparent materials and micro-processing of silicon compounds have been reported [1][2][3]. It is well known that different mechanisms of pulsed laser ablation of materials are realized at different laser pulse durations [4,5].…”

Section: Introductionmentioning

confidence: 99%

Partial crystallization of silicon by high intensity laser irradiation

Azuma

Sagisaka

Daido

et al. 2009

Applied Surface Science

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“…Later a self-consistent model has been developed that describes the initial stages of the micro-cones growth from the periodic relief of the solid surface [8]. Microcones on Si exhibit low-threshold of field emission of electrons [9][10][11][12]. Another interesting feature of micro-cones is the proximity of their thermal emission to that of an ideal black body [13,14].…”

Section: Introductionmentioning

confidence: 99%