Laser-modified molecular beam epitaxial growth of (Al)GaAs on GaAs and (Ca,Sr)F2/GaAs substrates

Tu, C. W.; Donnelly, Vincent M.; Beggy, J. C.; Baiocchi, F. A.; McCrary, V. R.; Harris, T. D.; Lamont, M. G.

doi:10.1063/1.99243

Cited by 12 publications

(1 citation statement)

References 19 publications

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“…Light stimulation of the growth surface offers an additional parameter with which to alter growth processes [7][8][9][10][11][12][13][14][15]28]. In particular, it has been shown to improve the crystal quality of II-VI semiconductor epilayers grown at temperatures as low as 150°C and has helped to improve extrinsic doping efficiency [16,17].…”

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confidence: 99%

Tailoring Heterovalent Interface Formation with Light

Park

Alberi

2017

Sci Rep

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Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interfaces between materials with different valences (i.e. III-V, II-VI and IV semiconductors) can be difficult to form with high quality. Using ZnSe/GaAs as a model system, we explore the use of ultraviolet (UV) illumination during heterovalent interface growth by molecular beam epitaxy as a way to modify the interface properties. We find that UV illumination alters the mixture of chemical bonds at the interface, permitting the formation of Ga-Se bonds that help to passivate the underlying GaAs layer. Illumination also helps to reduce defects in the ZnSe epilayer. These results suggest that moderate UV illumination during growth may be used as a way to improve the optical properties of both the GaAs and ZnSe layers on either side of the interface.

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