Polycrystalline films of undoped and fluorine-doped SnO2 (FTO) are deposited on a glass substrate by spray pyrolysis at 400 °C. The effects of fluor concentration (8, 10 and 12 %) on the structural, morphological, optical and electrical properties of FTO films are studied. Our XRD results show that F-SnO2 still has the same rutile structure as undoped SnO2 with improved crystallization for doped films, with no other phase detected. The measured contact angles are 90° for undoped and 8 % F doped films, which confirms the hydrophilic character, while other doped (SnO2:10 % F and SnO2:12 % F) films show the hydrophobic character at contact angle values of 90° and the super-hydrophobic (CA = 140°) for SnO2:12 % F thin film. A higher transmittance value of 83 %, a wide band gap equal to 3.9 eV, and lower disorder (287.68 meV) are observed for the 12 % F doped SnO2 film. In addition, electrical resistivity (), carrier concentration (n) and Hall mobility () are determined from Hall effect measurements and it is found that all the elaborated thin films have n-type conductivity. The lowest resistivity of 2.245 10 -4 Ωcm and the highest Hall mobility of 24.55 cm 2 V -1 s -1 are obtained at an F concentration of 12 %. The results suggest that the FTO film at 12 %F can be used as a transparent conductive oxide of the front electrode for film solar cells.