Laser-writable high-k dielectric for van der Waals nanoelectronics

Peimyoo, Namphung; Barnes, Matthew D.; Mehew, Jake D.; Sanctis, Adolfo De; Amit, Iddo; Escolar, Janire; Anastasiou, Konstantinos; Rooney, Aidan; Haigh, Sarah J.; Russo, Saverio; Craciun, Monica F.; Withers, Freddie

doi:10.1126/sciadv.aau0906

Cited by 65 publications

(71 citation statements)

References 65 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Among the materials which have already been investigated as gate insulators in 2D devices, we mention Ta 2 O 5 , which can be thermally oxidized from TaS 2 41 , and HfO 2 , which can be obtained by ambient exposure of HfSe 2 42 or by plasma oxidation of HfS 2 43 . This field is relatively unexplored, and in many cases the oxidation of 2D semiconductors leads to the formation of non-stoichiometric metal oxides, such as HfO x for HfS 2 44 .…”

Section: Future Development Of 2d Electronicsmentioning

confidence: 99%

See 1 more Smart Citation

Insulators for 2D nanoelectronics: the gap to bridge

et al. 2020

View full text Add to dashboard Cite

Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators.

show abstract

Section: Future Development Of 2d Electronicsmentioning

confidence: 99%

“…Another option is the partial oxidation of 2D materials which transforms them into their native oxides within the same heterostructure ( Fig. 1d) [41][42][43][44] . It has been suggested that this process will lead to atomically abrupt and defectfree interfaces, which possibly might be as good as or even better than the Si/SiO 2 interface ( Fig.…”

mentioning

confidence: 99%

Insulators for 2D nanoelectronics: the gap to bridge

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Moreover, lattice vacancies and atomic-level defect combined with the presence of light can accelerate the oxidation process [4][5][6][7][8], which is typically accompanied by a degradation of the electrical and optical properties reducing the device performance [9][10]. Furthermore, shining high intensity light on 2D materials can induce additional processes of photo-oxidation [11][12][13][14]. The overall performance reduction induced by oxidation seems to be one of the main issues to solve in developing industrial applications based on 2D materials, therefore controlling the oxidation process is a very active subject for both fundamental and applied research in the context of band engineering.…”

Section: Introductionmentioning

confidence: 99%

Tunable Photodetectors via In Situ Thermal Conversion of TiS3 to TiO2

et al. 2020

View full text Add to dashboard Cite

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS3), a layered semiconductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS3 in air above 300 °C gradually converts it into TiO2, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS3 nanoribbons and its influence on the optoelectronic properties of TiS3-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS3 devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO2-xSx) when increasing the amount of oxygen and reducing the amount of sulfur.

show abstract

“…Moreover, the dielectric permittivity of hBN is rather low compared to existing high-κ dielectrics 29 , with a value close to that of SiO 2 (ϵ r ∼ 4). This low dielectric constant and reduced breakdown voltage (see section V in SI) compromises not only the power consumption and the ability to reach high modulation efficiencies at reasonably low drive voltages but also limits the IL and the ER of the modulators 1,9 .…”

Section: Resultsmentioning

confidence: 84%

2D-3D integration of hBN and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

Agarwal¹,

Terrés²,

Orsini³

et al. 2020

Preprint

View full text Add to dashboard Cite

Electro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the first 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This novel combination of materials allows for a high-quality modulator device with record high performances: a ∼39GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high speed modulators. This first demonstration of 2D-3D integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

show abstract

Laser-writable high-k dielectric for van der Waals nanoelectronics

Abstract: 2D material compatible, writable, and high-k multifunctional oxide facilitates next-generation flexible van der Waals electronics.

Cited by 65 publications

References 65 publications

Insulators for 2D nanoelectronics: the gap to bridge

Insulators for 2D nanoelectronics: the gap to bridge

Tunable Photodetectors via In Situ Thermal Conversion of TiS3 to TiO2

2D-3D integration of hBN and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

Contact Info

Product

Resources

About