2017
DOI: 10.1002/adom.201700992
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Lasing Characteristics of CH3NH3PbCl3 Single‐Crystal Microcavities under Multiphoton Excitation

Abstract: Photoluminescence of CH 3 NH 3 PbCl 3 single crystals under multiphoton excitation is studied. The emission intensity and wavelength, which are related to the phase of the single crystals, are found to be dependent on the operating temperature and pressure. High optical gain (>110 cm −1 @ ≈395 nm) and high absorption coefficient (≈9 × 10 −10 cm 9 GW −5 @ 2400 nm) can also be obtained from the single crystals. With suitable design of the resonant optical amplification, lasing emission at ≈395 nm is demonstrated… Show more

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Cited by 22 publications
(10 citation statements)
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“…Perovskites possess a high optical gain and wavelength tunability in the range of 400-1000 nm [47]. The visible range is covered by APbX 3 perovskites, whereas in the [45] near-IR range lasing is achieved with CsSnI 3 perovskite material [48]. One of the highest values of the perovskite gain is 3200 cm −1 reported in Ref.…”
Section: Lasing Propertiesmentioning
confidence: 99%
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“…Perovskites possess a high optical gain and wavelength tunability in the range of 400-1000 nm [47]. The visible range is covered by APbX 3 perovskites, whereas in the [45] near-IR range lasing is achieved with CsSnI 3 perovskite material [48]. One of the highest values of the perovskite gain is 3200 cm −1 reported in Ref.…”
Section: Lasing Propertiesmentioning
confidence: 99%
“…MAPbI 3 ≈760-790 nm 250 10 −5 -10 −4 @ λ p =400 nm [43] MAPbBr 3 ≈530-550 nm 300 10 −5 -10 −4 @ λ p =355 nm [44] MAPbCl 3 ≈400-410 nm 110 10 −2 @ λ p =2100 nm [45] near-IR range lasing is achieved with CsSnI 3 perovskite material [48]. One of the highest values of the perovskite gain is 3200 cm −1 reported in Ref.…”
Section: Lasing Propertiesmentioning
confidence: 99%
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“…Forc omparison, we finely modulate the laser beam area and pump energy intensity to avoid the possible presence of thirdharmonic generation (THG) from laser beam, which impact the MPA-induced fluorescence intensity and data analysis, especially for the power dependence measurement. [26] The PLE spectra covering the whole excitation wavelength region of SpL(2)Ày and SpLÀz (y, z = 1-3) solutions are summarized in Figure 2a (Figure S8). TheMPA -induced fluorescence emission intensity of SpL-3 solution is in fact several orders ( 8) of magnitudes lower than that of 2PP,a nd no MPP PL signal was detected when the excitation wavelength exceeds 2200 nm.…”
Section: Methodsmentioning
confidence: 99%
“…As emerging materials, PVKs hold merits in both synthesis and properties absent in typical semiconductors like silicon and III‐V compounds (e.g., GaAs, InP, GaSb) or II–VI compounds (e.g., CdTe, CdS) . For instance, the bandgap of PVKs can be tuned from near ultraviolet (e.g., around 3 eV for MAPbCl 3 ) to near‐infrared region (e.g., 1.4 eV for FASnI 3 ) continuously by varying the composition. The photoluminescence (PL) spectra in Figure a show a case of bandgap tunability by modifying the halide composition in CsPbX 3 .…”
Section: Introductionmentioning
confidence: 99%