Lasing Characteristics of InGaP/GaAs Nanoscale Heterostructures

Sharma, Manu; Yadav, Rashmi; Lal, Pyare; Siddiqui, M. J.; Dalela, S.; Alvi, P. A.

doi:10.1166/asem.2014.1533

Cited by 2 publications

(3 citation statements)

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“…To reach laser oscillation, it is necessary that the modal gain must be equal the total losses α total . The laser oscillation condition is given as [22][23][24][25][26]:…”

Section: Resultsmentioning

confidence: 99%

Optical gain and threshold current density of strained wurtzite GaN/AlGaN quantum dot lasers

Bouchenafa

Benichou

2023

Rev. Mex. Fís.

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In this work, the influences of biaxial compressive and tensile strains on optical gain and threshold current density are investigated theoretically as a function of the side lengths of the quantum box in the GaN/Al0.2Ga0.8N structure by using a model based on the density matrix theory of semiconductor lasers with relaxation broadening. For various side lengths of the quantum box, we compare the spectra gain curves of compressive, tensile-strained, and unstrained structures of the GaN/Al0.2Ga0.8N cubic quantum-dot (QD) laser. The dependence of peak optical gain on carrier density and the modal gain on current density is plotted too for all cases. The results reveal that many enhancements can be made to the laser structure by introducing -0.5% compressive strain: a higher value of optical gain of 18421 cm-1 at L=60A, a lower value of transparency of carrier density of Ntr=0.13*10¨¨19 cm-3and transparency current density of Jtr=26.9 A/cm and a lower threshold current density of Jth= 78.87 A/cm2 at L=100 A.

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“…To reach laser oscillation, it is necessary that the modal gain must be equal the total losses α total . The laser oscillation condition is given as [22][23][24][25][26]:…”

Section: Resultsmentioning

confidence: 99%

Optical gain and threshold current density of strained wurtzite GaN/AlGaN quantum dot lasers

Bouchenafa

Benichou

2023

Rev. Mex. Fís.

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“…The nano-scale heterostructures have played an important role in the area of optoelectronics, particularly, in optical fiber communication where long wavelengths are required for communication purpose. For more than half a century, the research in semiconductor lasers and lasing heterostructures has been continued and contributed in a great way in the area of optoelectronics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. For example, radiation properties of semiconductor laser such as directivity, beam brightness, and its narrow spectral width, and coherence compelled them the best light sources in fiber optic links for long distance communication.…”

Section: Introductionmentioning

confidence: 99%

“…This results in the prospect of improving the semiconductor laser diode properties: controlling its wavelength, reducing its threshold current, and enhancing laser efficiency. Nowadays, in the field of nano-optoelectronics, the nano-scale lasing heterostructures having multiple quantum well have been most widely utilized [3], [7], [13]. The material system InGaAsP/InP based multiple quantum well lasing nano-heterostructures is generally utilized in optical fiber communications as a source of light because of their suitable lasing wavelength ranges.…”

Section: Introductionmentioning

confidence: 99%

Effects of Variation of Quantum Well Numbers on Gain Characteristics of Type-I InGaAsP/InP Nano-heterostructure

Anjum¹,

Sandhya²,

Khan³

et al. 2017

Bulletin EEI

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This paper reports the effects of variation of number of quantum wells in material gain characteristics and lasing wavelength of step index separately confined type-I InGaAsP/InP lasing nano-heterostructure for different carrier concentrations at room temperature in TE (Transverse Electric) mode of polarization. Peak material gain is found to be highest when the number of quantum well is one in the structure. However, for the case of 3QWs, 5QWs and 7QWs, it is almost same at a particular carrier density. Lasing wavelength at peak material gain considerably increases as the number of quantum well layers vary from single quantum well layer to three quantum well layers in the active region and after that it will remain almost same by any further increase in number of quantum wells for a particular carrier density. Furthermore, negative gain condition in the material gain spectra exists in the case of multiple quantum wells only at carrier concentration of 2×1018/cm3. The results suggest that the proposed nano-heterostructure is highly suitable as a light source in fiber optic links for long distance communication.

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Lasing Characteristics of InGaP/GaAs Nanoscale Heterostructures

Cited by 2 publications

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Optical gain and threshold current density of strained wurtzite GaN/AlGaN quantum dot lasers

Optical gain and threshold current density of strained wurtzite GaN/AlGaN quantum dot lasers

Effects of Variation of Quantum Well Numbers on Gain Characteristics of Type-I InGaAsP/InP Nano-heterostructure

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