Semiconductor Lasers and Laser Dynamics VIII 2018
DOI: 10.1117/12.2307131
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Lasing from ZnO nanorods on ITO-coated substrates

Abstract: Lasing was observed from ZnO nanorods prepared by a simple method of chemical bath deposition (CBD) on ITOcoated glass substrates. The X-ray diffraction pattern showed a dominant peak for (002) plane typical for good crystalline quality of ZnO grown in the z-direction with a wurtzite structure. Continuous-wave photoluminescence (PL) spectra revealed a peak centered at 380 nm corresponding to the band gap of ZnO. Under pulsed optical pumping, lasing was observed above the nominal PL peak, initially for one mode… Show more

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Cited by 3 publications
(5 citation statements)
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“…4(b), shift in lasing wavelength with increasing pump power was less than 0.05 nm and no additional peaks appeared indicating the stability of the lasing emission. Fixed number of modes with increasing pump power has been observed in our previous work from ZnO nanorod matts however there was a shift in wavelength with increasing pump power between 0.2 nm and 0.5 nm depending on the morphology of the sample [11,32,35]. The stability of the lasing emission from this work suggests that slight doping in preparing ZnO nanorods using chemical bath deposition method is a good way of making stable random lasers.…”
Section: Resultssupporting
confidence: 64%
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“…4(b), shift in lasing wavelength with increasing pump power was less than 0.05 nm and no additional peaks appeared indicating the stability of the lasing emission. Fixed number of modes with increasing pump power has been observed in our previous work from ZnO nanorod matts however there was a shift in wavelength with increasing pump power between 0.2 nm and 0.5 nm depending on the morphology of the sample [11,32,35]. The stability of the lasing emission from this work suggests that slight doping in preparing ZnO nanorods using chemical bath deposition method is a good way of making stable random lasers.…”
Section: Resultssupporting
confidence: 64%
“…Threshold reduction may be related to the transport mean free path which is affected by changes in rod density, length and size [30]. However, threshold reduction is always less than one order of magnitude [7,11,31,32]. Such large threshold changes, when compared with undoped ZnO, is implying that the aluminum embedded in the nanorods is responsible in reducing the threshold.…”
Section: Resultsmentioning
confidence: 99%
“…For rhodamine, the emission is between 550 and 610 nm. For ZnO random lasers, the emission is at ∼380 nm, and for gallium nitride (GaN) the emission is ∼365 nm. , Small changes in the emission wavelength are likely to occur in semiconductor nanostructures due to minor changes in the bandgap from small fluctuations of the size of nanostructures, mostly observed from ZnO. Figure shows the different random lasing emission wavelengths observed from several materials upon achieving the threshold. As observed from the figure, random lasers prepared by ZnO and GaN (as well as most solid-state semiconductor random lasers) show multiple emissions.…”
Section: Concept Of Random Lasermentioning
confidence: 99%
“…Emission spectra of (a) rhodamine dye mixed with TiO 2 nanoparticle at several pump powers with a concentration of 2 × 10 11 cm –3 , (b) GaN nanocolumns, and (c) ZnO nanorods. ,, …”
Section: Concept Of Random Lasermentioning
confidence: 99%
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