Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing

Indication of Lateral Nonuniformity of Effective Oxide Charges in High-k Gate Dielectrics by Terman's Method

“…The lateral nonuniformity (LNU) along the channel direction of Q ot and Q it is shown to be crucial for device performance [1]- [3], therefore the lateral profile and damage mechanism need to be deeply investigated. There are many efforts placed on locating the Q ot and Q it , however, they are all developed for extracting the lateral distribution generated by hot carriers.…”