Lateral AlGaN/GaN diode with MIS‐gated hybrid anode for high‐sensitivity zero‐bias microwave detection

Abstract

A zero-bias microwave detector using an AlGaN/GaN-on-Si lateral diode featuring a recessed metal/Al 2 O 3 /III-nitride (MIS) gated hybrid anode (MG-HAD) is experimentally demonstrated. The forward turnon voltage of the MG-HAD is determined by the threshold-voltage of the 2DEG channel beneath the recessed MIS-gate, and thus the nonlinearity of the device at zero bias can be flexibly modulated by gate recessing. The optimal trench depth of the MIS-gate for zero-bias detection was designed and experimentally determined to be ∼23 nm, which enables a high-curvature coefficient of 78 V −1 at zero bias. The first-order voltage sensitivity, β V , is as high as 7.8 mV/μW. To the best of the authors' knowledge, these values are the highest reported for GaN-based zero-bias detectors to date.

HAD fabricated on UTB AlGaN/GaN heterostructure for high‐sensitivity zero‐bias microwave detection

“…An optimal T AlGaN at 5 nm is obtained and yielded a peak γ of 41 V −1 . Noteworthily, the proposed UTB‐HAD eliminates the F‐ion implantation [10] and barrier recess [6], which features excellent controllability in tailoring the turn‐on voltage and γ at zero bias due to the barrier thickness can be precisely controlled during epitaxy process in metal‐organic chemical vapour deposition (MOCVD).…”

“…Up-to-date, GaN-based devices are highly desirable in RF applications [3,4]. There have been several reports on AlGaN/GaN Schottky barrier diodes in the zero-bias circuits as a microwave detector [5,6]. In zero-bias circuits, the elimination of the DC biasing network led to simplified circuitry and reduced shot and flicker noise and DC power consumption [7,8].…”