The results of a study of diamond p–i–n diode with a nitrogen‐doped intrinsic region on a substrate with the (001) orientation are presented. When the forward voltage is applied to the diode, a high current density of about 103 A cm−2 is obtained. Two narrow lines are detected in the electroluminescence spectrum of the p–i–n diode: one at a wavelength of 575 nm corresponding to the emission of the NV center (nitrogen‐vacancy color center) in a neutral charge state, and the second narrow line, which previously has not been observed in the electroluminescence spectra, at a wavelength of 533 nm. The line widths at room temperature are about 7 and 3 nm, respectively. By comparing the emission intensities of NV centers using the same optical registration system for electroluminescence and photoluminescence, the emission rate of NV centers during electroluminescence is estimated to be about 106 photon s−1, which allows to consider a diode of such design as a possible candidate to create single‐photon sources.

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The paper proposes a technology based on UV-LIGA process for microoptoelectromechanical systems (MOEMS) manufacturing. We used the original combination of materials and technological steps, in which any of the materials does not enter chemical reactions with each other, while all of them are weakly sensitive to the effects of oxygen plasma. This made it suitable for long-term etching in the oxygen plasma at low discharge power with the complete preservation of the original geometry, including small parts. The micromembranes were formed by thermal evaporation of Al. This simplified the technique compared to the classic UV-LIGA and guaranteed high quality and uniformity of the resulting structure. To demonstrate the complete process, a test MOEMS with electrostatic control was manufactured. On one chip, a set of micromembranes was created with different stiffness from 10 nm/V to 100 nm/V and various working ranges from 100 to 300 nm. All membranes have a flat frequency response without resonant peaks in the frequency range 0–200 kHz. The proposed technology potentially enables the manufacture of wide low-height membranes of complex geometry to create microoptic fiber sensors.

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