Lateral Built‐In Potential of Monolayer MoS<sub>2</sub>–WS<sub>2</sub> In‐Plane Heterostructures by a Shortcut Growth Strategy

Chen, Kun; Wan, Xi; Xie, Weiguang; Wen, Jinxiu; Kang, Zhiwen; Zeng, Xiaoliang; Chen, Huanjun; Xu, Jianbin

doi:10.1002/adma.201502375

Cited by 211 publications

(198 citation statements)

References 47 publications

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“…Observation under STEM indicates that the lateral interface is atomically sharp (Figure 5b), without extensive (WMo)S 2 alloying region 45, 46, 47, 48. The chemical modulation cross the lateral heterostructure is confirmed by elemental mapping using electron energy‐loss spectroscopy (EELS) imaging (Figure 5c−e).…”

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confidence: 84%

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS₂ Crystals on Silicon Dioxide Substrates

et al. 2016

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Large‐sized MoS2 crystals can be grown on SiO2/Si substrates via a two‐stage chemical vapor deposition method. The maximum size of MoS2 crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The electron mobility of the MoS2 crystals can reach ≈30 cm2 V−1 s−1, which is comparable to those of exfoliated flakes.

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confidence: 84%

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS₂ Crystals on Silicon Dioxide Substrates

et al. 2016

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“…CVD is a well‐established technology that has been demonstrated as a facile method for synthesizing large‐scale monolayer crystals, including graphene, MX 2 ,73, 110, 126, 127, 128, 129, 130, 131, 132, 133, 134 and their heterojunctions 135, 136, 137, 138, 139, 140. Compared with the exfoliation method, the direct synthesis of few‐layer and monolayer MX 2 by CVD is critical to large‐scale applications.…”

Section: Preparation Methodsmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

et al. 2017

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With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

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“…We achieve 100% overlap for each of the stacked TMDCs structures, with crystal sizes of the heterostructures one order of magnitude larger than previous reports121314161820212223242526. For the twinned growth of ReS 2 /WS 2 vertical heterostructures, Au is chosen as the substrate and W–Re alloy foil is used as the Re and W sources, which lower the barrier energies for this special twinned growth process.…”

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confidence: 99%

Twinned growth behaviour of two-dimensional materials

et al. 2016

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Twinned growth behaviour in the rapidly emerging area of two-dimensional nanomaterials still remains unexplored although it could be exploited to fabricate heterostructure and superlattice materials. Here we demonstrate how one can utilize the twinned growth relationship between two two-dimensional materials to construct vertically stacked heterostructures. As a demonstration, we achieve 100% overlap of the two transition metal dichalcogenide layers constituting a ReS2/WS2 vertical heterostructure. Moreover, the crystal size of the stacked structure is an order of magnitude larger than previous reports. Such twinned transition metal dichalcogenides vertical heterostructures exhibit great potential for use in optical, electronic and catalytic applications. The simplicity of the twinned growth can be utilized to expand the fabrication of other heterostructures or two-dimensional material superlattice and this strategy can be considered as an enabling technology for research in the emerging field of two-dimensional van der Waals heterostructures.

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Lateral Built‐In Potential of Monolayer MoS₂–WS₂ In‐Plane Heterostructures by a Shortcut Growth Strategy

Cited by 211 publications

References 47 publications

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS₂ Crystals on Silicon Dioxide Substrates

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS₂ Crystals on Silicon Dioxide Substrates

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Twinned growth behaviour of two-dimensional materials

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Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy

Cited by 211 publications

References 47 publications

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS2 Crystals on Silicon Dioxide Substrates

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS2 Crystals on Silicon Dioxide Substrates

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Twinned growth behaviour of two-dimensional materials

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Product

Resources

About

Lateral Built‐In Potential of Monolayer MoS₂–WS₂ In‐Plane Heterostructures by a Shortcut Growth Strategy

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS₂ Crystals on Silicon Dioxide Substrates

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS₂ Crystals on Silicon Dioxide Substrates