Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors 1997
DOI: 10.1109/iscs.1998.711614
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Lateral confinement and inter-wire coupling of exciton in 4-16 nm wide GaAs/AlGaAs quantum wires observed by magnetoluminescence

Abstract: The result on magnetoluminescence study of the exciton in GaAs/AlosGao.sAs quantum wire (QWR) superlattice grown on vicinal GaAs substrate are reported. For 30 T, the diamagnetic shift is 7.8 meV for QWR of 4 nm wide, while it is 11 meV for QWR of 8 nm or wider. For 4 nm QWR, the diamagnetic shift remains the same up to 17 T for the magnetic field parallel and angled to the growth direction. But, it saturates in the angles geometry at 17 T where the cyclotron diameter becomes comparable to QWR width. If the la… Show more

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