The result on magnetoluminescence study of the exciton in GaAs/AlosGao.sAs quantum wire (QWR) superlattice grown on vicinal GaAs substrate are reported. For 30 T, the diamagnetic shift is 7.8 meV for QWR of 4 nm wide, while it is 11 meV for QWR of 8 nm or wider. For 4 nm QWR, the diamagnetic shift remains the same up to 17 T for the magnetic field parallel and angled to the growth direction. But, it saturates in the angles geometry at 17 T where the cyclotron diameter becomes comparable to QWR width. If the lateral confinement model is introduced in the formation of exciton in QWR, the saturation can be interpreted as the breaking of inter-wire coupling.

The &man splitting and diamagnetic shift of heavy-hole exciton in GaAs/ ~0.2jGa0.75k multi-quantum wells (MQW) were investigated for various barrier widths by magnetoluminescence up to 30 T at 4.2 K. It is obtained that the diamagnetic shift is independent to the barrier width (LB), but the effective g-factor becomes smaller as LB decreases for a fixed QW width. Also repxted is the fine splitting due to the exchange interaction for LB I 50 A.