Lateral current density fronts in asymmetric double-barrier resonant-tunneling structures

Rodin, Pavel; Schoell, Eckehard

doi:10.1063/1.1568529

Cited by 11 publications

(3 citation statements)

References 22 publications

(43 reference statements)

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“…7 Specific functional forms f (a, u), j(a, u), and D a (a) have been derived for various semiconductors and semiconductor structures. 2,7,8,9,10,17,18,20,34,41,42 The physical meaning of a depends on the particular type of bistable structure: a corresponds to the bias of the emitter p -n junction for avalanche transistors, 18 thyristors 20 and thyristorlike structures, 21 interface charge for heterostructure hot electron diode, 34 electron charge stored in the quantum well for bistable double barrier resonant tunneling diode, 41,42 etc.…”

Section: Model Of a Bistable Semiconductor Systemmentioning

confidence: 99%

Theory of traveling filaments in bistable semiconductor structures

Rodin

2004

Phys. Rev. B

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We present a generic nonlinear model for current filamentation in semiconductor structures with S-shaped current-voltage characteristics. The model accounts for Joule self-heating of a current density filament. It is shown that the self-heating leads to a bifurcation from static to traveling filament. Filaments start to travel when increase of the lattice temperature has negative impact on the cathode-anode transport. Since the impact ionization rate decreases with temperature, this occurs for a wide class of semiconductor systems whose bistability is due to the avalanche impact ionization. We develop an analytical theory of traveling filaments which reveals the mechanism of filament motion, find the condition for bifurcation to traveling filament, and determine the filament velocity.Comment: 13 pages, 5 figure

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Section: Model Of a Bistable Semiconductor Systemmentioning

confidence: 99%

Theory of traveling filaments in bistable semiconductor structures

Rodin

2004

Phys. Rev. B

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“…For samples with a large diameter, they predicted α = 1, while for samples with a small diameter they find α = 3/2. In related work on semiconductor systems, Schöll and co-workers introduced reaction-diffusion models for the lateral dynamics of the front that separates the high and low current density states for double barrier resonant tunneling structures [30] and superlattices [31].…”

Section: Introductionmentioning

confidence: 99%

Scaling properties of noise-induced switching in a bistable tunnel diode circuit

2019

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Noise-induced switching between coexisting metastable states occurs in a wide range of far-fromequilibrium systems including micro-mechanical oscillators, epidemiological and climate change models, and nonlinear electronic transport in tunneling structures such as semiconductor superlattices and tunnel diodes. In the case of tunnel diode circuits, noise-induced switching behavior is associated with negative differential resistance in the static current-voltage characteristics and bistability, i.e., the existence of two macroscopic current states for a given applied voltage. Noise effects are particularly strong near the onset and offset of bistable current behavior, corresponding to bifurcation points in the associated dynamical system. In this paper, we show that the tunnel diode system provides an excellent experimental platform for the precision measurement of scaling properties of mean switching times versus applied voltage near bifurcation points. More specifically, experimental data confirm that the mean switching time scales logarithmically as the 3/2 power of voltage difference over an exceptionally wide range of time scales and noise intensities.

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“…In fact, we will show that the electronic transport in superlattices, which leads to current branches, can be approximated by an equivalent circuit consisting of tunnel diodes connected in series. Tunnel diodes are nonlinear circuit elements, with similar N -shaped currentvoltage characteristics as superlattices and double barrier resonant tunneling diodes (DBRT ) [17,18,3,19,20,21,22], which can also show a regime, where the current I decreases with increasing voltage V . This is depicted in Fig.…”

Section: Introductionmentioning

confidence: 99%

Symmetry-breaking transitions in networks of nonlinear circuit elements

et al. 2010

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We investigate a nonlinear circuit consisting of N tunnel diodes in series, which shows close similarities to a semiconductor superlattice or to a neural network. Each tunnel diode is modeled by a three-variable FitzHugh-Nagumo-like system. The tunnel diodes are coupled globally through a load resistor. We find complex bifurcation scenarios with symmetry-breaking transitions that generate multiple fixed points off the synchronization manifold. We show that multiply degenerate zero-eigenvalue bifurcations occur, which lead to multistable current branches, and that these bifurcations are also degenerate with a Hopf bifurcation. These predicted scenarios of multiple branches and degenerate bifurcations are also found experimentally.

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Lateral current density fronts in asymmetric double-barrier resonant-tunneling structures

Cited by 11 publications

References 22 publications

Theory of traveling filaments in bistable semiconductor structures

Theory of traveling filaments in bistable semiconductor structures

Scaling properties of noise-induced switching in a bistable tunnel diode circuit

Symmetry-breaking transitions in networks of nonlinear circuit elements

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