Lateral epitaxial growth of germanium on silicon oxide

Cammilleri, V. D.; Yam, V.; Fossard, F.; Renard, Charles; Bouchier, D.; Fazzini, Pier Francesco; Ortolani, Luca; Houdellier, Florent; Hÿtch, Martin

doi:10.1063/1.2963363

Cited by 19 publications

(13 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is hence crucial to be able to grow high quality SiGe layers selectively on Si. For GOI structures, currently, many techniques such as oxidation-induced Ge condensation, 12 laser annealing, 13,14 solid-phase crystallization, 15,16 metal-induced lateral crystallization, 17 bonding, 18 and lateral epitaxial growth 19 have been introduced. However, these techniques to obtain GOI structures can be very complicated and have difficulty in achieving high-quality Ge films.…”

Section: High Quality Single-crystal Germanium-on-insulator On Bulk Smentioning

confidence: 99%

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Cheng

Park

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

Germanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free GOI by using lateral over-growth through SiO2 window. The dislocations due to the lattice mismatch are effectively terminated and reduced in SiO2 trench by selective area heteroepitaxy combined with hydrogen annealing. Low defect density of 4× 106 cm-2 and low surface roughness of 0.7 nm (root-mean-square) on GOI are confirmed by plan-view transmission electron microscopy and atomic force microscopy analysis. In addition, the excellent metal-semiconductor-metal diode electrical characteristics fabricated on this GOI confirm Ge crystal quality. The selectively grown GOI structure can provide the monolithic integration of SiGe based devices on a Si very large scale integration (VLSI) platform. © 2010 American Institute of Physics

show abstract

Section: High Quality Single-crystal Germanium-on-insulator On Bulk Smentioning

confidence: 99%

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Cheng

Park

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…We have developed a method based on local oxidation of silicon ͑LOCOS͒ to create well-localized nanoscale silicon seeds that enable the lateral growth of Ge on thermal silicon oxide of desired thickness. 5,6 In this paper, we present our studies on the growth kinetics of nanoscale seed induced LELOX Ge crystal. The as-grown structures were investigated by reflection high energy electron diffraction ͑RHEED͒, scanning electron microscopy ͑SEM͒, transmission electron microscopy ͑TEM͒, and x-ray diffraction ͑XRD͒.…”

Section: Introductionmentioning

confidence: 99%

Growth kinetics of Ge crystals on silicon oxide by nanoscale silicon seed induced lateral epitaxy

Cammilleri

Yam

Fossard

et al. 2009

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

In this paper, we present our studies on the growth kinetics of Ge crystals on silicon oxide by nanoscale seed induced lateral epitaxy. We propose a simple and reliable method based on standard local oxidation of silicon technique for creating nanoscale silicon seeds at the edge of thermally grown silicon oxide stripes of desired thickness. The growth of Ge from germane is initiated in the two silicon seed lines and evolves toward a complete wetting of the SiO 2 stripe after coalescence. The wetting mechanism of SiO 2 by Ge is strongly dependent on the seed orientation and closely related to the development of ͕111͖ facets. The coalescence of adjacent Ge crystals results in an improvement in the organization of the initial material. As a result, no defect is visible in the inner part of the structure. The observed defects are arrays of misfit dislocations standing along the seed lines, while only few dislocations are visible through the Ge crystal. Geometric phase analysis of high resolution transmission electron microscopy images and x-ray diffraction reciprocal space maps show that the so-grown Ge crystal stripes on SiO 2 layer are fully relaxed, homogeneous, and fully coherent along their length. The main deviation regarding a perfect epitaxial relation with the silicon substrate is a tilt of Ϯ0.6°around the longitudinal axis of stripe crystals.

show abstract

“…The developments of gate stacks and source/drain junction technologies have led to high effective mobilities in Ge metal-oxide-semiconductor field-effect-transistors (MOSFETs) exceeding those in Si-MOSFETs 4 – 7 . For expanding the application of Ge-MOSFETs in system-in-displays (system-on-panels) or three-dimensional integrated circuits, Ge on insulator (GOI) technology has been developed using mechanical transfer 8 , oxidation-induced condensation 9 , 10 , epitaxial growth on Si on insulator (SOI) 11 , 12 , and rapid-melting growth 13 – 16 . To avoid thermal damage to the substrates and to lower the process costs, the low-temperature formation (<600 °C) of GOI is necessary.…”

Section: Introductionmentioning

confidence: 99%

High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

Toko

Yoshimine

Moto

et al. 2017

Sci Rep

116

View full text Add to dashboard Cite

High-carrier mobility semiconductors on insulators are essential for fabricating advanced thin-film transistors, allowing for three-dimensional integrated circuits or high-performance mobile terminals. We investigate the low-temperature (375–450 °C) solid-phase crystallization (SPC) of Ge on a glass substrate, focusing on the precursor conditions. The substrate temperature during the precursor deposition, T d, ranged from 50 to 200 °C. According to the atomic density of the precursor and the T d dependent SPC properties, the precursor conditions were determined by three regimes: the low-density regime (T d < 100 °C), high-density regime (100 ≤ T d ≤ 125 °C), and nucleation regime (T d > 125 °C). The use of the precursor in the narrow high-density regime enabled us to form SPC-Ge with a hole mobility of 340 cm2/Vs, the highest value among semiconductor thin films grown on insulators at low temperature (<900 °C). The origins of the high hole mobility were determined to be both a large grain size (5 µm) and a low energy barrier height (6.4 meV) for the grain boundary. The findings from and knowledge gained in this study, that is, the influence of the precursor conditions on subsequent crystal growth, will be universal and applicable to various materials.

show abstract

Lateral epitaxial growth of germanium on silicon oxide

Cited by 19 publications

References 12 publications

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Growth kinetics of Ge crystals on silicon oxide by nanoscale silicon seed induced lateral epitaxy

High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

Contact Info

Product

Resources

About