Lateral IBIC analysis of GaAs Schottky diodes

Vittone, E.; Olivero, P.; Nava, F.; Manfredotti, C.; Giudice, A. Lo; Fizzotti, F.; Egeni, G.P.

doi:10.1016/j.nimb.2005.01.109

Cited by 6 publications

(6 citation statements)

References 10 publications

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“…A recent experimental improvement has extended the capabilities of IBIC to lower energies and greater sensitivity [60], with the use of low-noise, cooled preamplifiers for the detection of low energy, heavy ions such as 10 keV phosphorous for single atom doping experiments. IBIC has been also used to analyse charge transport properties of devices based on III-V (GaAs, GaN) or II-VI (CdTe, CdZnTe) compounds both for optoelectronics applications [61,62] and ioniing radiation detection [63,64].…”

Section: Review Of Ibic Applicationsmentioning

confidence: 99%

A review of ion beam induced charge microscopy

Breese

Vittone²,

Vizkelethy

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

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100

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Section: Review Of Ibic Applicationsmentioning

confidence: 99%

A review of ion beam induced charge microscopy

Breese

Vittone²,

Vizkelethy

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

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100

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“…is interpretation has been subsequently reinforced by lateral IBIC experiments, which evidence the formation of a Mott-like barrier at high electric �eld due to the electric�eld-enhanced capture cross section of electrons from deep donor levels [106].…”

Section: Other Wide Bandgap Semiconductorsmentioning

confidence: 90%

Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy

Vittone

2013

ISRN Materials Science

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e ion beam induced charge (IBIC) technique is a scanning microscopy technique which uses �nely focused MeV ion beams as probes to measure and image the transport properties of semiconductor materials and devices. Its success stems from the combination of three main factors: the �rst is strictly technical and lies in the availability of laboratories and expertise around the world to provide scanning MeV ion beams focused down to submicrometer spots. e second reason stems from the peculiarity of MeV ion interaction with matter, due to the ability to penetrate tens of micrometers with reduced scattering and to excite a high number of free carriers to produce a measurable charge pulse from each incident ion. Last, but not least, is the availability of a robust theoretical model able to extract from the measurements all the parameters for an exhaustive characterization of the semiconductor. is paper is focused on these two latter issues, which are examined by reviewing the current status of IBIC by a comprehensive survey of the theoretical model and remarkable examples of IBIC applications and of ancillary techniques to the study of advanced semiconductor materials and devices.

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“…4 that the reverse current increases gradually indicating that it depends slightly on the applied voltage. Additionally, the reverse current trend is lower than the forward current trend for the entire voltage range suggesting that the distribution of charge carrier in the material, in general, is as a result of recombination mechanism [14,16,20].…”

Section: Diodesmentioning

confidence: 94%

“…The wafer was diced into 0.6 cm × 0.6 cm pieces. The pieces were cleaned following the standard procedure to remove handling grease and other contaminants and then immersed in 40 % HF solution to remove oxygen layer on the surface [16]. After the cleaning procedure, all samples were set-up in the chamber for Zn doping.…”

Section: Sample Preparationmentioning

confidence: 99%

Effects of zinc doping on current-voltage and capacitance-voltage-frequency characteristics of n-silicon Schottky diode

Oeba

Bodunrin

Moloi

2022

Preprint

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The electrical properties of diodes fabricated on undoped and zinc-doped n-silicon were investigated in this study using current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) techniques. The diode’s forward current decreased by a factor of ~ 3, while the reverse current increased by a factor of ~ 37, confirming that the charge carrier recombination/ compensation is due to the generation of minority carrier to increase the resistivity of the material upon doping with zinc (Zn). The generation of the minority carrier was confirmed by inversion of the material conductivity form n- to p-type, as shown by C-V results. Furthermore, the findings reveal that Zn is responsible for a reduction in full depletion voltage (FDV), implying that the space charge region (SCR) width can be fully depleted with a relatively low applied voltage. For the manufacturing of sensitive radiation detectors, a low FDV is critical. A change in the electrical properties of the diode was explained in terms of defects induced in the Si bulk by Zn. The properties of Zn-doped n-Si-based diodes are similar to those of radiation-hard Si devices. In general, the findings suggest that Zn might be employed as a possible dopant in a study to improve the characteristics of Si to fabricate radiation-hard and sensitive detectors for current and future high energy physics experiments.

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Lateral IBIC analysis of GaAs Schottky diodes

Cited by 6 publications

References 10 publications

A review of ion beam induced charge microscopy

A review of ion beam induced charge microscopy

Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy

Effects of zinc doping on current-voltage and capacitance-voltage-frequency characteristics of n-silicon Schottky diode

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