Strong
perpendicular magnetic anisotropy (PMA) is crucial
for high-performance
spintronic devices. However, in transition-metal oxides, it is challenging
to achieve an excellent PMA property (anisotropy energy, K
U > 106 erg/cm3), limiting their
application potential. Here, we report a pathway to achieve obvious
PMA in 3d–5d [nLa0.67Sr0.33MnO3,nSrIrO3]m ([nLSMO, nSIO]m) heterostructures via the cooperation of
interfacial engineering and crystal orientation. By depositing multilayers
with a (110) orientation, significant PMA is observed despite the
fact that the bare LSMO and (001)-oriented heterostructures show in-plane
magnetic anisotropy. First-principles calculations suggest that in
the (110)-oriented heterosystems, SIO exhibits a large and perpendicular
single-ion anisotropy attributed to its strong spin–orbit coupling
effect, which leads to the PMA through strong orbital hybridization
between Mn and Ir ions at the LSMO/SIO interface. By varying thicknesses
(n) of LSMO and SIO, the K
U can be optimized to 4 × 106 erg/cm3.
Moreover, the conductive behavior can also be drastically altered
between insulation and metallicity with the n change,
implying the potential for simultaneously obtaining ferromagnetic
metals and insulators with sizable PMA in one oxide heterosystem.
These findings highlight the importance of interfacial engineering
and crystalline orientation in tuning PMA in oxides and provide a
feasible route for developing high-performance oxide-based spintronic
devices.