Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

Hakkarainen, Teemu; Schramm, Andreas; Tukiainen, Antti; Ahorinta, Risto; Toikkanen, L.; Guina, Mircea

doi:10.1007/s11671-010-9747-2

Cited by 7 publications

(6 citation statements)

References 16 publications

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“…23 From Fig. 2(b) and (c) it is noticeable how in the x ¼ 0.28 and x ¼ 0.31 samples QDs tend to align along the directions parallel to ridges or valleys, an effect already seen at lower x in samples with low QD densities, 9,11,24 but not reported so far for structures with higher QD densities.…”

Section: Resultsmentioning

confidence: 76%

“…1,2 InAs QDs grown on metamorphic buffers (MBs) have been researched for almost a decade, thanks to the possibility of extending the emission wavelength of GaAs-based structures towards the 1.55 mm window, an important technological feature. [3][4][5][6] More recently the growth of QDs on metamorphic InGaAs relaxed layers has attracted interest for the development of single photon sources at long wavelengths, 7,8 as a means to align QDs on the surface, [9][10][11] and for the possibility of independent control of QD strain and band discontinuities. 12 Notwithstanding, the peculiarities of the self-assembled growth of QDs on InGaAs MBs have been mostly overlooked, even if relevant differences with the growth on GaAs layers have been reported, such as the different critical thickness for the transition from two-dimensional (2D) to three-dimensional (3D) growth, the modified QD morphological properties and the increased QD density.…”

Section: Introductionmentioning

confidence: 99%

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2D–3D growth transition in metamorphic InAs/InGaAs quantum dots

Seravalli¹,

Trevisi²,

Frigeri³

2012

CrystEngComm

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We study the growth by Molecular Beam Epitaxy of InAs quantum dots (QDs) on InGaAs metamorphic buffers (MBs), allowing independent control of the mismatch f between QDs and MBs (7.2% > f > 4.5%) and the In content x of the surface underlying QDs (0 # x # 0.35), taking advantage of the dependence of MB strain relaxation on MB thickness. AFM characterization indicated an enlargement of QD diameters for x $ 0.35, while changing f had negligible effects. The twodimensional (2D) to three-dimensional (3D) critical thickness q c was measured by RHEED: for fixed x, q c increases with reducing f due to the reduction of the elastic energy of the 2D InAs wetting layer (WL), in agreement with literature model predictions. For fixed f, q c reduces with increasing x, an effect not reported so far that we discuss in terms of: (i) enhanced surface diffusion of In atoms on In-richer surfaces and (ii) In-richer WLs in the picture of 2D-3D transition due to In segregation in WLs. These results indicate that metamorphic QDs provide interesting possibilities to control structure properties and can be a model system to investigate the physical mechanisms of the 2D-3D transition.

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Section: Resultsmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

2D–3D growth transition in metamorphic InAs/InGaAs quantum dots

Seravalli¹,

Trevisi²,

Frigeri³

2012

CrystEngComm

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“…The traditional methods used so far for the positioning of InAs QDCs include the use of patterning by e-beam lithography patterning [4], cleaved-edge overgrowth [5] or selective-area growth [6]. Spontaneously assembled In(Ga)As QDCs have been achieved by InGaAs/GaAs superlattice growth [7] and by exploiting the strain fluctuations in dislocation patterned templates [8]. As an alternative method for the fabrication of site-controlled InAs QDCs, we use a combination of UV-nanoimprint lithography (UV-NIL) and molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

Structural characterization of InAs quantum dot chains grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs(100)

Hakkarainen¹,

Tommila²,

Schramm³

et al. 2011

Nanotechnology

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We combine nanoimprint lithography and molecular beam epitaxy for the site-controlled growth of InAs quantum dot chains on GaAs(100) substrates. We study the influence of quantum dot growth temperature and regrowth buffer thickness on the formation of the quantum dot chains. In particular, we show that by carefully tuning the growth conditions we can achieve equal quantum dot densities and photoluminescence ground state peak wavelengths for quantum dot chains grown on patterns oriented along the [011], [01 ̄1], [011] and [001] directions. Furthermore, we identify the crystal facets that form the sidewalls of the grooves in the differently oriented patterns after capping and show that the existence of (411)A sidewalls causes reduction of the QD density as well as sidewall roughening.

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“…Previous works are inconclusive on which effect is dominant, with some suggesting both mechanisms play a role [49,50] and others suggesting it is primarily the strain-field effect alone. [51] Alternatively, the influence of the misfit dislocations may be more indirect and instead act by altering the thickness and composition of the InGaAs QW, which is known to strongly affect QD morphology and luminescence. [52,53] The directional effect of this, however, is not immediately clear.…”

Section: Impact Of Remote Misfit Dislocations On Quantum Dot Formationmentioning

confidence: 99%

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

Hughes

Kusch

Selvidge

et al. 2023

Physica Status Solidi (a)

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This study probes the extent to which dislocations reduce carrier lifetimes and alter growth morphology and luminescence in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic‐integrated circuits. Around 20%–30% shorter carrier lifetimes are found at spatially resolved individual dislocations at room temperature using time‐resolved cathodoluminescence spectroscopy, highlighting the strong nonradiative impact of dislocations even against the three‐dimensional confinement of QDs. Beyond these direct effects of increased nonradiative recombination, it is found that misfit dislocations in the defect filter layers employed during III–V/Si growth alter the QD growth environment to induce a crosshatch‐like variation in QD emission color and intensity when the filter layer is positioned sufficiently close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. This work presents a more complete picture of the impacts of dislocations relevant to the development of light sources for scalable silicon photonic integrated circuits.

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Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

Cited by 7 publications

References 16 publications

2D–3D growth transition in metamorphic InAs/InGaAs quantum dots

2D–3D growth transition in metamorphic InAs/InGaAs quantum dots

Structural characterization of InAs quantum dot chains grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs(100)

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

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