Lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process

Giziewicz, Wojciech; Prasad, S.; Fonstad, Clifton G.

doi:10.1109/icsens.2004.1426157

Cited by 6 publications

(5 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, there has been much research for the study and development of high-speed photodetectors [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]; these devices find their use in many optoelectronic applications such as optical fiber communication systems, chip-to-chip connections, optical heterodyne conversion, and so on [20][21][22][23][24]. The lateral type photodetectors are by far the most advantageous for use in monolithic GaAs optoelectronic integrated circuits (OEIC) [1,[5][6][7][8][9][10][11][12][13][14][15][16][17]. For a long time, the photodetector of choice in such applications has been the lateral metal-semiconductor-metal (MSM).…”

Section: Introductionmentioning

confidence: 99%

“…Although the MSM structures present many advantageous features, such as low dark current, low capacitance per unit area, and easy integrability with metal–semiconductor field effect transistor devices, they suffer, however, from low responsivity. Recently, theoretical studies of the lateral p‐i‐n (LPIN) junctions were conducted to assess their potential to present an alternative to the MSM photodetectors in such OEIC applications . However, the need of the p‐doping to fabricate the LPIN makes it not fully compatible with the GaAs OEIC processing.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high‐speed photodetector

Debbar

2015

Int J Numerical Modelling

View full text Add to dashboard Cite

We present a numerical characterization of a high-speed high-responsivity GaAs lateral Schottky barrier photodiode (LSBPD). The LSBPD is a planar structure composed of interdigitated Schottky barrier and ohmic contacts. A metalsemiconductor-metal (MSM) structure with identical geometry is simulated for comparison. The dark characteristics are found identical for the two devices. Under illumination, the LSBPD exhibited significantly superior responsivity compared with the MSM, while maintaining comparatively similar response time and 3 dB bandwidths. The results of the study indicate conclusively that the lateral Schottky barrier photodiode can provide an excellent alternative to the standard MSM photodetectors for high-speed optoelectronic applications.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high‐speed photodetector

Debbar

2015

Int J Numerical Modelling

View full text Add to dashboard Cite

show abstract

“…The interdigitated lateral pin photodiode (ILPP) structure has been developed on many different substrates utilizing different material as the absorbing layer depending on the respective wavelengths. These include silicon 16, silicon‐on‐SOI (silicon‐on‐insulator) 17, Ge‐on‐SOI 18, GaAs 19 and InGaAs 20–23. The structures developed on InGaAs/InP substrates have exhibited a −3 dB frequency of 2 GHz ( λ = 1.54 µm), 7.5 GHz ( λ = 1.3 µm), 560 MHz ( λ = 1.3 µm) and 100 MHz ( λ = 1.55 µm) respectively.…”

Section: Introductionmentioning

confidence: 99%

Concentration‐dependent minority carrier lifetime in an In_0.53Ga_0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology

Menon

Kandiah

Ehsan

et al. 2010

Int J Numerical Modelling

View full text Add to dashboard Cite

SUMMARYThe fitted parameters for the analytic function used to specify the doping dependence of minority carrier lifetimes for In 0.53 Ga 0.47 As (InGaAs) is described in this paper. This model together with other carrier models was used to develop an interdigitated lateral PIN photodiode utilizing InGaAs as the absorbing layer. We propose the usage of spin-on chemicals such as spin-on dopants and spin-on glass to form the p1 wells, n1 wells and the surface passivation layer of the device hence providing a cheap and easy solution versus the conventional epitaxial growth methodology. The modeled device achieved dark currents of 0.21 nA and capacitance of 2.87 nF at an operating voltage of 5 V. Optical illumination at a wavelength of 1550 nm and power of 10 W/cm 2 enabled the device to achieve responsivity of 0.56 A/W and external quantum efficiency of 44%. The À3 dB frequency response of the device was at 8.93 GHz and signal-tonoise ratio is 36 dB. The developed device shows close correlation with experimentally developed devices developed using other fabrication methodologies. The results of this work would be useful in the thorough development of InGaAs-based devices based on spin-on chemical fabrication methodology using commercial device simulation packages.

show abstract

“…These include silicon [6], silicon-on-SOI (silicon-on-insulator) [7], Ge-on-SOI [8], GaAs [9] and InGaAs [10 -13]. These include silicon [6], silicon-on-SOI (silicon-on-insulator) [7], Ge-on-SOI [8], GaAs [9] and InGaAs [10 -13].…”

Section: Introductionmentioning

confidence: 99%

The Development of a new Responsivity Prediction Model for In0.53Ga0.47As Interdigitated Lateral p-i-n Photodiode

Kandiah

Ehsan

Shaari

2009

Journal of Optical Communications

View full text Add to dashboard Cite

The interdigitated lateral p-i-n photodiode (ILPP) has profound advantages compared to the vertical p-i-n photodiode (VPD) structure mainly due to the ease of fabrication where diffusion or ion implantation can be used to form the p+ and n+ wells in the absorbing layer. A novel ILPP model utilizing In 0.53 Ga 0.47 As (InGaAs) as the absorbing layer was developed and optimized statistically using fractional factorial design (FFD) methodology. Seven model factors were investigated and a new analytical equation was developed to predict the responsivity of ILPP devices as a function of design factors. Comparison between the simulated and calculated responsivity values yielded error ratios of less than 3 %. A statistically optimized ILPP model with -3 dB frequency of 7.5 GHz, responsivity of 0.61 A/W and signal-to-noise ratio (SNR) of 20 dB was developed at an operating voltage of 5 V, wavelength of 1.55 mm and optical input power of 10 Wcm -2 . Hence the model qualifies to be used as a cheap and affordable device in fiber-to-the-home based on passive-optical-networks (FTTH-PON) operating at a minimum speed of 2.5 Gbps.

show abstract

Lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process

Cited by 6 publications

References 2 publications

Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high‐speed photodetector

Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high‐speed photodetector

Concentration‐dependent minority carrier lifetime in an In_0.53Ga_0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology

The Development of a new Responsivity Prediction Model for In0.53Ga0.47As Interdigitated Lateral p-i-n Photodiode

Contact Info

Product

Resources

About

Lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process

Cited by 6 publications

References 2 publications

Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high‐speed photodetector

Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high‐speed photodetector

Concentration‐dependent minority carrier lifetime in an In0.53Ga0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology

The Development of a new Responsivity Prediction Model for In0.53Ga0.47As Interdigitated Lateral p-i-n Photodiode

Contact Info

Product

Resources

About

Concentration‐dependent minority carrier lifetime in an In_0.53Ga_0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology