Lateral RF SOI power MOSFETs with f/sub T/ of 6.9 GHz

Shenai, K.; McShane, E.; Leong, S. K.

doi:10.1109/55.870614

Cited by 14 publications

(5 citation statements)

References 8 publications

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“…In [8] and [9], we demonstrated an RF LD-MOSFET on SOI that had DC and small-signal RF characteristics that are suitable for RF PAs. The of the devices ap-proach 15 GHz and the breakdown voltage exceeds 20 V. In [7], [10]- [12], LDMOSFETs were also demonstrated on SOI with substantially different designs and varying levels of performance. In [12], SOI LDMOSFETs were demonstrated with an off-state breakdown voltage of 14 V and a remarkable poweradded efficiency (PAE) of more than 50% at 5.8 GHz.…”

Section: Ilicon-on-insulator (Soi) Mos Technology Hasmentioning

confidence: 99%

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Fiorenza

Alamo

2002

IEEE Trans. Electron Devices

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Abstract-We have simultaneously fabricated RF power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current-voltage ( -), capacitance-voltage ( -), -parameter, and 1.9-GHz load-pull characteristics and explains differences between them. The SOI LDMOSFET performance is shown to be largely similar to the performance of an equivalent bulk silicon LDMOSFET, but there are important differences. The SOI LDMOSFET has moderately lower on-state breakdown voltage due to increased body resistance. It also has significantly improved power-added efficiency due to reduced parasitic pad losses.Index Terms-Power MOSFET, silicon-on-insulator (SOI) technology.

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Section: Ilicon-on-insulator (Soi) Mos Technology Hasmentioning

confidence: 99%

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Fiorenza

Alamo

2002

IEEE Trans. Electron Devices

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“…The SOI LDMOS was fabricated in a 1.2-µm CMOS SIMOX process after minor modifications [1]. To suppress floating body effects, p + plugs (body ties) were introduced in the source area to ground the body.…”

Section: Device Structuresmentioning

confidence: 99%

“…The SOI RF power LDMOSFET is relatively new, with reported results concentrating on room temperature operation [1][2][3]. In power electronics applications, the thermal robustness of SOI devices is well established; but similar data does not exist for RF applications.…”

Section: Introductionmentioning

confidence: 99%

Thermal Robustness of Silicon-on-Insulator Versus Bulk Material in L-Band RF Power LDMOSFETs

McShane

Shenai²

2001

31st European Solid-State Device Research Conference

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A 7.5-V SOI LDMOSFET was fabricated. Using finite-element numerical simulation, a matched device structure was obtained. Then, by making only minor process modifications, an equivalent simulated bulk device was obtained. Complete DC and RF characterization (experimental and simulated) was performed at 25 and 125°C to compare the technologies. The results show the SOI can deliver higher current density, larger transconductance, better forward transmission, and higher maximum stable gain than the bulk device. SOI has improved performance despite self-heating of up to 20°C more than in bulk. These results are encouraging for developing integrated power amplifiers using SOI.

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“…Self-heating due to presence of buried oxide is also one of the factors that currently hinders the use of DO47 -5 silicon-on-insulator (Sol) for high power RF applications. Furthermore, thin SO1 for Power LDMOS has limitations for RF due to onset of the parasitic bipolar at high gate voltages [22].…”

Section: Vi: Emerging Technologies and Future Trendsmentioning

confidence: 99%

Progress in silicon RF Power MOS technologies - current and future trends

Souza

Cao

Narayanan

et al.

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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In this paper, the current progress and factors limiting the y e florniance of silicon RF Power device technologies are reviewed. Silicon VDMOSFETS have high linearity but the gain is low at frequencies in excess of I GHz. LDMOSFETs have higher gain and can operate upto 2.4 GHz. However, the linearity and reliability of LDMOSFETs is poor in comparison to VDMOSFETs. New architectzires and evolving trends are discussed.

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Lateral RF SOI power MOSFETs with f/sub T/ of 6.9 GHz

Cited by 14 publications

References 8 publications

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Thermal Robustness of Silicon-on-Insulator Versus Bulk Material in L-Band RF Power LDMOSFETs

Progress in silicon RF Power MOS technologies - current and future trends

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