Lattice Boltzmann simulation of metal-induced crystallization of amorphous semiconductor films

Metal-induced crystallization of amorphous semiconductor films: Nucleation phenomena in Ag-Ge films

“…The difference in contact angles of the Ag-base phase with a-Ge and c-Ge drives the advancement of the crystallization front and defines its velocity, as was shown in Ref. [36] for the sister Au/Ge film.…”