Lattice disorder in alumina single crystals produced by ion bombardment

Naguib, Hala F.; Singleton, J. F.; Grant, W. A.; Carter, G.

doi:10.1007/bf00754899

Cited by 52 publications

(5 citation statements)

References 30 publications

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“…The saturation suggests that the defects are very mobile at these high damage levels such that defects ara annihilated at the same rate as they are produced. This may be similar to the saturation noted by earlier investigators and interpreted as being due to the amorphous state [4,5]. Burnett and Page [31] report that a -A1 2' J 3 implanted with 6 x 10 17 Cr/cm 2 (300 keV) at 300 K had an amorphous surface layer, hence the curve in Fig.…”

Section: Introduction -^Andfahsupporting

confidence: 86%

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Damage accumulation in ceramics during ion implantation

McHargue

Farlow

Begun

et al. 1986

Nuclear Instruments and Methods in Physics Research Section B:

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The damage structures of a-Al 2 O 3 and a-SiC were examined as functions of ion implantation parameters usino Rutherford backscattering-channeling, analytical electron microscopy, and Raman spectroscopy. Low temperatures or high fluences cf cations favor formation of the amorphous state. At 300 K, mass of the bombarding species has only a small effect on residual damage, but certain ion specias appear to stabilize the damage microstructure and increase the rate of approach to the amorphous state. The type of chemical bonding present in the host lattice is an important factor in determining the residual-damage, state.

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Section: Introduction -^Andfahsupporting

confidence: 86%

“…Curves of lattice disorder (determined by RBS) introduced by 40 keV krypton ion bombardment of a-Al 2 O 3 had a sigmoidal form and reached a saturation value at a fluence of 1 x 10 16 ions/cm 2 [5]. Although the yield of the peak damage region for the aligned crystals never reached that of a random sample,…”

Section: Introduction -^Andfahmentioning

confidence: 95%

Damage accumulation in ceramics during ion implantation

McHargue

Farlow

Begun

et al. 1986

Nuclear Instruments and Methods in Physics Research Section B:

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“…Currently, the degree of lattice disorder in AI2O3 per unit fluence appears much loss than in previous studies [13][14][15][16][17][18][19][20][21]. For example, the increase in the aligned upectra minima for the 40 koV Kr bombardment [201 occurs at about two order:; of magnitude lower <loso (lo'Vcnr) than our 1 MoV Pe irradiations (10 l '/cm*).…”

Section: Discussionmentioning

confidence: 58%

“…Other investigators have studied defect structure produced by the implantation of H, He, Ar, Kr, and Xe as well .is self ion implantation of aluminum and oxygen [15][16][17][18][19][20]. Although no data on mechanical properties have been repeated, a group at Sandia National Laboratory has calculatedRurface stress produced in AI2O3 from a measurement of the -deflection of a cantilever beam specimen during implantation [21].…”

Section: One Of the Results Of Ion Implantation Studies Carried Out Omentioning

confidence: 99%

Ion Beam Mixing of Ceramic Alloys - Preparation Andmechanical Properties

Lewis

McHargue

1981

MRS Proc.

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Techniques used to produce unique states of pure metals mixed into ceramic materials are presented. The samples were prepared by irradiating a 1-MeV Fe + beam on AI2O3 crystal surfaces over which a thin chromium or zirconium film had been evaporated. The limitations of using noble gas ion beams are noted. Micro Knoop hardness tests performed near the surfaces of the samples indicated a significant I increase in the hardness of most samples prepared by ion j beam mixing.

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“…This causes structural disordering in fct PtMn. [14] An incident ion, on the other hand, first interacts with the electrons in atoms. This interaction may cause local heating with a Gaussian-like temperature profile around the center of the ion track.…”

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confidence: 99%

Thermal Decay and Reversal of Exchange Bias Field of CoFe/PtMn Bilayer after Ga ⁺ Irradiation

Zhou

Zhu

Lin

2011

Chinese Phys. Lett.

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An applied field is used to perform Ga + ion irradiation on a CoFe/PtMn bilayer. Effects of the applied field and energy transfer between Ga + ions and antiferromagnetic (AFM) atoms on the exchange bias field 𝐻ex are investigated. A partially reversed 𝐻ex is found in CoFe/PtMn specimens irradiated at a dose of 1 × 10 14 ions/cm 2 with an applied field anti-parallel to the original exchange bias direction. We believe that the rapid energy transfer and local temperature increase originating from the interaction between Ga + ions and AFM atoms result in spin reversal and the formation of reversed AFM domains when specimens are irradiated with anti-parallel fields. The decrease in 𝐻ex when annealing the film in a negative saturation field indicates a thermal decay process. The AFM moments are reversed by thermal activation over an energy barrier distribution, which may change in some way as the temperature increases.

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Lattice disorder in alumina single crystals produced by ion bombardment

Cited by 52 publications

References 30 publications

Damage accumulation in ceramics during ion implantation

Damage accumulation in ceramics during ion implantation

Ion Beam Mixing of Ceramic Alloys - Preparation Andmechanical Properties

Thermal Decay and Reversal of Exchange Bias Field of CoFe/PtMn Bilayer after Ga ⁺ Irradiation

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Lattice disorder in alumina single crystals produced by ion bombardment

Cited by 52 publications

References 30 publications

Damage accumulation in ceramics during ion implantation

Damage accumulation in ceramics during ion implantation

Ion Beam Mixing of Ceramic Alloys - Preparation Andmechanical Properties

Thermal Decay and Reversal of Exchange Bias Field of CoFe/PtMn Bilayer after Ga + Irradiation

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Product

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Thermal Decay and Reversal of Exchange Bias Field of CoFe/PtMn Bilayer after Ga ⁺ Irradiation