Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy

Jeganathan, K.; Shimizu, Mitsuaki; Okumura, Hajime; Yano, Yoshiki; Akutsu, Nakao

doi:10.1016/j.jcrysgro.2007.03.035

Cited by 56 publications

(55 citation statements)

References 12 publications

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“…In compositions were estimated from the angular separation between well-resolved InAlN and GaN (0002) peaks using Vegard's law. 13 In composition determined from XRD as a function of growth temperature linearly increases with the decrease of growth temperature as shown in Fig. 3.…”

Section: Resultsmentioning

confidence: 89%

“…Upon nucleation, the bright 1 × 1 RHEED pattern remained streaky as that of GaN layer for lattice matched InAlN. 13 The AFM surface morphology of In x Al 1-x N layers grown at various growth temperatures is shown in Fig. 1.…”

Section: Resultsmentioning

confidence: 98%

“…The flat surfaces accompany with few spiral features, which can be related to the dislocations having screw components. Nevertheless, the smooth surface morphology and the corresponding streaky RHEED pattern 13 indicate that the InAlN barrier layer was coherently grown on AlN/GaN surface at optimum growth temperature of ∼450 • C. Further, as lowering the growth temperature, the layer becomes very smooth at 415 and 410 • C. On the other hand, at 380 • C, the layer results phase separation in InAlN alloys. InN clusters can be clearly seen on the AFM image as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The growth of GaN, AlN and InAlN surfaces were monitored by in situ reflection-high energy electron diffraction (RHEED) along the [11][12][13][14][15][16][17][18][19][20] azimuth. Upon nucleation, the bright 1 × 1 RHEED pattern remained streaky as that of GaN layer for lattice matched InAlN.…”

Section: Resultsmentioning

confidence: 99%

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Importance of growth temperature on achieving lattice-matched and strained InAlN/GaN heterostructure by plasma-assisted molecular beam epitaxy

Jeganathan

Shimizu

2014

AIP Advances

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We investigate the role of growth temperature on the optimization of lattice-matched In0.17Al0.83N/GaN heterostructure and its structural evolutions along with electrical transport studies. The indium content gradually reduces with the increase of growth temperature and approaches lattice-matched with GaN having very smooth and high structural quality at 450ºC. The InAlN layers grown at high growth temperature (480ºC) retain very low Indium content of ∼ 4 % in which cracks are mushroomed due to tensile strain while above lattice matched (>17%) layers maintain crack-free compressive strain nature. The near lattice-matched heterostructure demonstrate a strong carrier confinement with very high two-dimensional sheet carrier density of ∼2.9 × 1013 cm−2 with the sheet resistance of ∼450 Ω/□ at room temperature as due to the manifestation of spontaneous polarization charge differences between InAlN and GaN layers.

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Importance of growth temperature on achieving lattice-matched and strained InAlN/GaN heterostructure by plasma-assisted molecular beam epitaxy

Jeganathan

Shimizu

2014

AIP Advances

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“…Many studies have been performed to improve the performance of devices, such as increasing the Al composition of an AlGaN barrier [2], using a thin AlN spacer layer at the AlGaN/GaN interface [3,4], and replacing the GaN with InGaN as the channel [5,6] and AlGaN with AlInN [7][8][9][10][11][12][13][14][15][16] as the barrier. Among these, the lattice-matched AlInN barrier is considered to be the most promising barrier alternative for improving the HEMT performance.…”

Section: Introductionmentioning

confidence: 99%

The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure

et al. 2014

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One AlInN/AlN/GaN single channel heterostructure sample and four AlInN/AlN/GaN/AlN/GaN double channel heterostructure samples with different values of the second GaN layer were studied. The interface profiles, crystalline qualities, surface morphologies, and dislocation densities of the samples were investigated using high resolution transmission electron microscopy, atomic force microscopy, and high-resolution X-ray diffraction. Some of the data provided by these measurements were used as input parameters in the calculation of the scattering mechanisms that govern the transport properties of the studied samples. Experimental transport data were obtained using temperature dependent Hall effect measurements (10-300 K) at low (0.5 T) and high (8 T) magnetic fields to exclude the bulk transport from the two-dimensional one. The effect of the thickness of the second GaN layer inserted between two AlN barrier layers on mobility and carrier concentrations was analyzed and the dominant scattering mechanisms in the low and high temperature regimes were determined. It was found that Hall mobility increases as the thickness of GaN increases until 5 nm at a low temperature where interface roughness scattering is observed as one of the dominant scattering mechanisms. When GaN thicknesses exceed 5 nm, Hall mobility tends to decrease again due to the population of the second channel in which the interface becomes worse compared to the other one. From these analyses, 5 nm GaN layer thicknesses were found to be the optimum thicknesses required for high electron mobility.

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MBEofIII‐Nitride Semiconductors for Electronic Devices

Aidam

Ambacher

Diwo

et al. 2019

Molecular Beam Epitaxy

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Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy

Cited by 56 publications

References 12 publications

Importance of growth temperature on achieving lattice-matched and strained InAlN/GaN heterostructure by plasma-assisted molecular beam epitaxy

Importance of growth temperature on achieving lattice-matched and strained InAlN/GaN heterostructure by plasma-assisted molecular beam epitaxy

The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure

MBEofIII‐Nitride Semiconductors for Electronic Devices

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