Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires

Abstract

Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics.

Efficient organic self-powered photoelectrochemical photodetectors based on conjugated polymers/fullerene heterojunctions

“…Meanwhile, the photoconductive detectors normally need an external power supply to achieve the desired device performance, which not only increases energy consumption, but also makes it difficult to miniaturize photodetectors. 23–27 Therefore, it is full of challenge to develop a novel structure to solve these problems.…”

Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

“…6 It is found that the lower experimental mobility arises from two intrinsic challenges: (i) metal–semiconductor interface contacts, where the presence of defect-induced gap states can suppress the carrier-injection efficiency, leading to both Fermi level pinning and Schottky barriers; 7–9 (ii) electron transport in semiconductor channels, mainly influenced by Coulomb impurities near the semiconductor–dielectric interface, charge traps, defects, etc. 10–12 Therefore, further electronic performance optimization of MoS 2 devices by reducing contact resistance, enhancing carrier transport, and improving the mobility is the central task to tackle the application challenges of transistors.…”

Straddling SnSe2/SnS2 van der Waals tunneling heterostructures for high performance broadband photodetectors

“…[8][9][10][11][12][13][14] Moreover, they provide the advantage of designing heterostructures without the requirement of precise atomic lattice matching, resulting in greater freedom in designing and engineering electronic and optoelectronic devices. [15][16][17][18][19][20][21][22] The use of vdW heterostructures composed of 2D crystals as tunneling transistors is a highly promising field for low-power applications. 23,24 These heterostructures allow for the manipulation of carrier densities and electron affinities, enabling the tailored design of band alignments.…”