Lattice Parameter Changes in Al0.39Ga0.61As Due to O, Ge, Si, and S Doping

Abstract

The change in lattice parameter of epitaxial films of Alo.zgGa0.61As was investigated as a function of growth solution doping. With the lattice constant of GaAs as the reference constant, it was found that the presence of either O2 in the growth ambient or Ge in the growth solutions dilated the lattice. Growth solution doping with Si was found to initially dilate the lattice while further Si doping resulted in a lattice contraction. Sulfur doping contracted the lattice. It was found that the lattice dilation due to Os in the growth ambient principally resulted from a reduction in the background S contamination of the epitaxial films.

The impact of oxygen incorporation during the MBE growth of AlGaAs

“…Our observations are in agreement with the results obtained by Wagner et al who reported a contraction in the Al 0.39 Ga 0.61 As lattice constant due to oxygen in a layer grown by liquid phase epitaxy [27]. They explained that oxygen incorporation caused a contraction in the Al x Ga 1-x As lattice constant at x~0.39 due to an electronic effect and ion size effects.…”