Lattice Sites of Phosphorus in ZnMnTe - A Compensation Study

Abstract

In this paper we investigate phosphorus doped ZnMnTe by means of infrared absorption. We report pronounced changes in the absorption spectra upon increasing phosphorus doping and upon annealing at 850 C in nitrogen atmosphere at high pressure. From the far-infrared local vibrational spectra we identify the lattice sites of phosphorus in ZnMnTe and interpret the strong compensation of the as-grown material in terms of at least partial passivation by hydrogen.

Probing Hole-Induced Ferromagnetic Exchange in Magnetic Semiconductors by Inelastic Neutron Scattering

“…Since transport measurements [12,13] show that the p-type sample in question remains on the insulator side of the MIT, we begin the interpretation of our findings by evaluating the expected magnitude of the hole-induced energy shift if the holes were strongly localized at individual acceptor sites. From earlier studies of bound magnetic polarons in p-type DMSs [19], we know that the Mn spins residing at the distance r from the acceptor experience a molecular field,…”

“…However, it has been shown previously by some of us that large single crystals of Zn 1ÿx Mn x Te:P can be prepared [13], in which Mn and hole concentrations are sufficiently high to observe ferromagnetic ordering. Our Zn 1ÿx Mn x Te crystals are grown by the high pressure Bridgman method from ZnTe 1ÿx MnTe x solution in an evacuated (10 ÿ6 Torr) quartz ampoule, with phosphorus corresponding to the doping level of 5 10 19 cm ÿ3 added in the form of Zn 3 P 2 .…”

“…On the other hand, according to previous SQUID measurements, the annealed samples exhibit the presence of ferromagnetic correlation, which leads to the Curie-Weiss ferromagnetic temperature of about 2 K [13].…”

Simulating far infrared spectra of Zn1-xMnxSe/GaAs epifilms, MnSe/ZnSe superlattices and predicting impurity modes of N, P defects in Zn1-xMnxSe

“…As the degeneracy at the N Se (P Se ) site is lifted due to Mn alloying, the ATM-GF calculation [50] for Mn Zn - 14 N Se (Mn Zn -P Se ) pairs ascribed two modes (see Table 4), one A 1 appearing at a lower frequency and the other E at a higher frequency of the main 14 N Se (P Se ) F 2 local mode. In the absence of experimental results for p-doped Zn 1−x Mn x Se, our simulations offered compelling validations to impurity modes by IR spectroscopy [64] of low phosphorous dopant levels in dilute Zn 1−x Mn x Te ( x  < 0.025).…”

Electrical, Magnetic and Magnetooptical Properties of Bulk (Zn,Mn)Te Semimagnetic Semiconductor Doped with Phosphorus

“…Specifically, it has been recently found that annealing under high pressure of nitrogen gas of Bridgman-grown crystals of Zn 1-x Mn x Te doped with phosphorus (P) allows one to obtain hole concentrations as high as 5×10 18 cm -3 at T=300 K for x=0.05 [2]. Specifically, it has been recently found that annealing under high pressure of nitrogen gas of Bridgman-grown crystals of Zn 1-x Mn x Te doped with phosphorus (P) allows one to obtain hole concentrations as high as 5×10 18 cm -3 at T=300 K for x=0.05 [2].…”