Lattice thermal conductivity of group-IV and III–V semiconductor alloys

Adachi, Sadao

doi:10.1063/1.2779259

Cited by 113 publications

(80 citation statements)

References 34 publications

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“…3), so-called the Norbury model. 44 Although the Norbury model fits very well to the measured data, the system investigated by us is certainly not an alloy as the indisputable crystallinity of films is discussed in the supplementary material. 33 To demonstrate accidental similarity of our data with the alloy-like curve, we performed also a molecular dynamics calculation of κ for ideal Si/Ge SL, having an identical structure as the system investigated here.…”

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confidence: 83%

Tailoring of the electrical and thermal properties using ultra-short period non-symmetric superlattices

et al. 2016

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Thermoelectric modules based on half-Heusler compounds offer a cheap and clean way to create eco-friendly electrical energy from waste heat. Here we study the impact of the period composition on the electrical and thermal properties in non-symmetric superlattices, where the ratio of components varies according to (TiNiSn)(n:)(HfNiSn)(6-n), and 0 <= n <= 6 unit cells. The thermal conductivity (kappa) showed a strong dependence on the material content achieving a minimum value for n = 3, whereas the highest value of the figure of merit ZT was achieved for n = 4. The measured kappa can be well modeled using non-symmetric strain relaxation applied to the model of the series of thermal resistances. (C) 2016 Author(s)

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confidence: 83%

Tailoring of the electrical and thermal properties using ultra-short period non-symmetric superlattices

et al. 2016

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“…Thermal conductivity, specific heat and mass density of the different materials shown Table I are taken from the literature. 22,25,26,28,29 The heat source is assumed concentrated in the active regions of the lasers, which are highlighted in Fig. 1, and the heat is assumed to flow downward to a perfect heat sink below the substrate.…”

Section: Resultsmentioning

confidence: 99%

“…The thermal conductivities of the materials used in calculating k eff were taken from the literature. 25,26 It can be noted that the QCL has a higher k eff compared to the GaSb laser, as InP has nearly twice the thermal conductivity compared to GaSb.…”

Section: A Determination Of Effective Thermal Parametersmentioning

confidence: 99%

Transient thermal analysis of semiconductor diode lasers under pulsed operation

et al. 2017

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Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are ‘short’. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper, we present an experimental and theoretical analysis of the effect of pulse width on laser characteristics. First, a measurement method is introduced to study thermal transients of edge-emitting lasers during pulsed operation. This method can also be applied to lasers that do not operate in continuous-wave mode. Secondly, an analytical thermal model is presented which is used to fit the experimental data to extract important parameters for thermal analysis. Although commercial numerical tools are available for such transient analyses, this model is more suitable for parameter extraction due to its analytical nature. Thirdly, to validate this approach, it was used to study a GaSb-based inter-band laser and an InP-based quantum cascade laser (QCL). The maximum pulse-width for less than 5% error in the measured threshold currents was determined to be 200 and 25 ns for the GaSb-based laser and QCL, respectively.

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“…In the numerical calculations performed on a MQW consisting of 200 periods of InGaAs quantum wells and InP barriers, the optical and geometrical parameters of the system at = 1.5 m were considered as follows: = 3.03 = 233.3 nm, = 3.2003, and = 7 nm which are barrier refractive index, barrier width, and quantum well refractive index and width, respectively [11,17]. As it is known, the excitonic resonance energy at 10 K is ℎ 0 = 0.849 ev [18].…”

Section: Resultsmentioning

confidence: 99%

Investigating Optical Properties of One-Dimensional Photonic Crystals Containing Semiconductor Quantum Wells

Mokhtarnejad

Asgari

Sabatyan

2017

International Journal of Optics

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This study examined MQWs made of InGaAs/GaAs, InAlAs/InP, and InGaAs/InP in terms of their band structure and reflectivity. We also demonstrated that the reflectivity of MQWs under normal incident was at maximum, while both using a strong pump and changing incident angle reduced it. Reflectivity of the structure for a weak probe pulse depends on polarization, intensity of the pump pulse, and delay between the probe pulse and the pump pulse. So this system can be used as an ultrafast all-optical switch which is inspected by the transfer matrix method. After studying the band structure of the one-dimensional photonic crystal, the optical stark effect (OSE) was considered on it. Due to the OSE on virtual exciton levels, the switching time can be in the order of picoseconds. Moreover, it is demonstrated that, by introducing errors in width of barrier and well as well as by inserting defect, the reflectivity is reduced. Thus, by employing the mechanism of stark effect MQWs band-gaps can be easily controlled which is useful in designing MWQ based optical switches and filters. By comparing the results, we observe that the reflectivity of MWQ containing 200 periods of InAlAs/InP quantum wells shows the maximum reflectivity of 96%.

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Lattice thermal conductivity of group-IV and III–V semiconductor alloys

Cited by 113 publications

References 34 publications

Tailoring of the electrical and thermal properties using ultra-short period non-symmetric superlattices

Tailoring of the electrical and thermal properties using ultra-short period non-symmetric superlattices

Transient thermal analysis of semiconductor diode lasers under pulsed operation

Investigating Optical Properties of One-Dimensional Photonic Crystals Containing Semiconductor Quantum Wells

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