Lattice vibration characteristics in layered InSe films and the electronic behavior of field-effect transistors

Chen, Fangfang; Cui, Anyang; Wang, Xiang; Gao, Chenlin; Xu, Liping; Jiang, Kai; Zhang, Jinzhong; Hu, Zhigao; Chu, Junhao

doi:10.1088/1361-6528/ab8df1

Cited by 4 publications

References 52 publications

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Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity

et al. 2021

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Recently, researchers have focused on optoelectronics based on two-dimensional van der Waals materials to realize multifunctional memory and neuron applications. Layered indium selenide (InSe) semiconductors satisfy various requirements as photosensitive channel materials, and enable the realization of intriguing optoelectronic applications. Herein, we demonstrate InSe photonic devices with different trends of output currents rooted in the carrier capture/release events under various gate voltages. Furthermore, we reported an increasing/flattening/decreasing synaptic weight change index (∆Wn) via a modulated gate electric field, which we use to imitate medicine-acting metaplasticity with effective/stable/ineffective features analogous to the synaptic weight change in the nervous system of the human brain. Finally, we take advantage of the low-frequency noise (LFN) measurements and the energy-band explanation to verify the rationality of carrier capture-assisted optoelectronics applied to neural simulation at the device level. Utilizing optoelectronics to simulate essential biomedical neurobehaviors, we experimentally demonstrate the feasibility and meaningfulness of combining electronic engineering with biomedical neurology.

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Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity

et al. 2021

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Temperature-dependent phonon mode and interband electronic transition evolutions of ε-InSe films derived by pulsed laser deposition

Xie

et al. 2020

Applied Physics Letters

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We report the temperature-dependent phonon modes and interband electronic transitions of InSe films on SiO2/Si substrates prepared by pulsed laser deposition. The microstructure results proved the ε phase structure and monochalcogenide phase composition with well-defined hexagonal InSe sheets. The temperature effects on lattice vibrations were discovered by Raman spectra from 123 K to 423 K. The frequency and full width at half maximum of the A2g1(LO) mode show a strong nonlinearity with the temperature. The energy band structure and electron–phonon interaction were studied by temperature-dependent spectroscopic ellipsometry with the aid of the Tauc–Lorentz model. It was found that five electronic transitions around 1.33, 1.61, 2.53, 3.73, and 4.64 eV generally show a redshift trend with the temperature. The present results can provide a valuable reference for future optoelectronic applications of InSe films.

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Strain-induced variations in the Raman and infrared spectra of monolayer InSe: A first-principles study

Zeng,

Chen,

Jiang

et al. 2024

Journal of Applied Physics

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Monolayer indium selenide (InSe), a two-dimensional material, exhibits exceptional electronic and optical properties that can be significantly modulated via strain engineering. This study employed density functional theory to examine the structural and vibrational properties of monolayer InSe under varying biaxial strains. Phonon dispersion analysis confirmed the stability of monolayer InSe, as indicated by the absence of imaginary frequencies. The study extensively detailed how Raman and infrared spectra adjust under strain, showing shifts in peak positions and variations in intensity that reflect changes in lattice symmetry and electronic structures. Specific findings include the stiffening of the A′1 mode and the increased intensity of E″ and E′ modes under strain, suggesting enhanced polarizability and asymmetric vibrations. Moreover, the Raman intensity for the E′ mode at 167.3 cm−1 increased under both tensile and compressive strain due to enhanced polarizability and symmetry disruption, while the IR intensity for the A″2 mode at 192.1 cm−1 decreased, likely from diminished dipole moment changes. In contrast, the low-frequency modes, such as E″ at 36.8 cm−1, demonstrated insensitivity to strain, implying a minimal impact on heavier atoms within these modes. Overall, this study highlights the sensitivity of vibrational modes to strain-induced changes, providing valuable insights into the behavior of monolayer InSe under mechanical stress.

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Lattice vibration characteristics in layered InSe films and the electronic behavior of field-effect transistors

Cited by 4 publications

References 52 publications

Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity

Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity

Temperature-dependent phonon mode and interband electronic transition evolutions of ε-InSe films derived by pulsed laser deposition

Strain-induced variations in the Raman and infrared spectra of monolayer InSe: A first-principles study

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