Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties

Lee, Jang‐Sik; Cho, Jinhan; Lee, Chiyoung; Kim, Inpyo; Park, Jeongju; Kim, Yong Mu; Shin, Hyun Young; Lee, Jaegab; Caruso, Frank

doi:10.1038/nnano.2007.380

Cited by 260 publications

(229 citation statements)

References 36 publications

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“…Furthermore, they demonstrated facile synthesis of multiple charge trapping layers via solution processes shown in Fig. 6, resulting in a memory window increase [49].…”

Section: Operations Of Non-volatile Memory Devicesmentioning

confidence: 99%

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

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Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily synthesized, and have a high work function. Various synthesis methods have been applied to fabricate gold nanoparticle-based nonvolatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory applications. In this article, the recent advances in fabrication and characterization of gold nanoparticle-based nonvolatile memory devices, with an emphasis on flash memory-type memory devices, are reviewed. Detailed device fabrication, characterization, and future directions are reported based on the recent research activities and literature.

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“…Furthermore, they demonstrated facile synthesis of multiple charge trapping layers via solution processes shown in Fig. 6, resulting in a memory window increase [49].…”

Section: Operations Of Non-volatile Memory Devicesmentioning

confidence: 99%

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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“…Gold nanoparticles display a variety of properties [7] and have important applications as diverse as cosmetics [8], electronics [9], therapeutics [10][11][12], imaging [13,14], drug delivery [15,16], and pollution remediation [17,18]. The mentioned applications often call for monodisperse nanoparticles of a particular size in large quantities and/or at high concentrations [19,20].…”

Section: Introductionmentioning

confidence: 99%

Effect of high gold salt concentrations on the size and polydispersity of gold nanoparticles prepared by an extended Turkevich–Frens method

et al. 2012

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The Turkevich-Frens synthesis starting conditions are expanded, ranging the gold salt concentrations up to 2 mM and citrate/gold(III) molar ratios up to 18:1. For each concentration of the initial gold salt solution, the citrate/gold(III) molar ratios are systematically varied from 2:1 to 18:1 and both the size and size distribution of the resulting gold nanoparticles are compared. This study reveals a different nanoparticle size evolution for gold salt solutions ranging below 0.8 mM compared to the case of gold salt solutions above 0.8 mM. In the case of [Au 3+ ]<0.8 mM, both the size and size distribution vary substantially with the citrate/gold(III) ratio, both displaying plateaux that evolve inversely to [Au 3+ ] at larger ratios. Conversely, for [Au 3+ ]≥0.8 mM, the size and size distribution of the synthesized gold nanoparticles continuously rise as the citrate/gold(III) ratio is increased. A starting gold salt concentration of 0.6 mM leads to the formation of the most monodisperse gold nanoparticles (polydispersity index< 0.1) for a wide range of citrate/gold(III) molar ratios (from 4:1 to 18:1). Via a model for the formation of gold nanoparticles by the citrate method, the experimental trends in size could be qualitatively predicted: the simulations showed that the destabilizing effect of increased electrolyte concentration at high initial [Au 3+ ] is compensated by a slight increase in zeta potential of gold nanoparticles to produce concentrated dispersion of gold nanoparticles of small sizes.

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“…In this regard, IR-based electronic devices are under vigorous studies in both academia and industry for the rapid development of portable and flexible electronics 8,9 . Nonvolatile printed memory devices have great potential in modern electronic systems such as radio frequency identification tags, portable personal computers and sensors [10][11][12][13][14][15][16][17][18][19][20][21] . IR-sensing memory array can be used in various applications such as an integrated imaging system or light-assisted special storage; meanwhile, the non-visible light is more suitable for data encryption 22,23 .…”

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An upconverted photonic nonvolatile memory

et al. 2014

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Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.

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Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties

Cited by 260 publications

References 36 publications

Recent progress in gold nanoparticle-based non-volatile memory devices

Recent progress in gold nanoparticle-based non-volatile memory devices

Effect of high gold salt concentrations on the size and polydispersity of gold nanoparticles prepared by an extended Turkevich–Frens method

An upconverted photonic nonvolatile memory

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