We describe a versatile approach for preparing flash memory devices composed of polyelectrolyte/gold nanoparticle multilayer films. Anionic gold nanoparticles were used as the charge storage elements, and poly(allylamine)/poly(styrenesulfonate) multilayers deposited onto hafnium oxide (HfO2)-coated silicon substrates formed the insulating layers. The top contact was formed by depositing HfO2 and platinum. In this study, we investigated the effect of increasing the number of polyelectrolyte and gold nanoparticle layers on memory performance, including the size of the memory window (the critical voltage difference between the 'programmed' and 'erased' states of the devices) and programming speed. We observed a maximum memory window of about 1.8 V, with a stored electron density of 4.2 x 1012 cm-2 in the gold nanoparticle layers, when the devices consist of three polyelectrolyte/gold nanoparticle layers. The reported approach offers new opportunities to prepare nanostructured polyelectrolyte/gold nanoparticle-based memory devices with tailored performance.

Objective: One of the most prevalent and distressing symptoms following breast cancer treatment is menopausal symptoms. Asian American breast cancer survivors have lower quality of life and often receive inadequate management of menopausal symptoms compared to other racial/ ethnic groups. Technology-based programs could be a solution to fill the gap in care. The purpose of this study was to test the efficacy of a technology-based information and coaching/support program on menopausal symptoms of Asian American breast cancer survivors.Methods: This study adopted a randomized pretest/posttest group design among 91 Asian American breast cancer survivors (42 in an intervention group who used the program and the American Cancer Society [ACS] website and 49 in a control group who used only the ACS website). The intervention was a theory-driven and culturally tailored intervention program that aimed to provide information and coaching/support using computers and mobile devices. Multiple instruments were used to measure background characteristics and menopausal symptoms at pretest, post 1-month, and post 3-months. An intent-to-treat linear mixed-model growth curve analysis was used to analyze the data. Results:The intervention group showed a significant decrease in the distress scores of menopausal symptoms over time: physical (β = −0.07, p = 0.08), psychological (β = −0.13, p = 0.05), psychosomatic (β = −0.17, p = 0.06), and total symptoms (β = −0.19, p = 0.01). Theorybased variables including attitudes, social influences and self-efficacy partially mediated the impact of the intervention on the distress scores of menopausal symptoms (p < 0.10).

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Background: Difficulties in recruiting and retaining Asian Americans in traditional research have been well-documented. Despite an increasing number of technology-based cancer studies among racial/ethnic minorities, little is still known about potential issues in recruiting and retaining racial/ethnic minority cancer survivors for technology-based intervention research.Objective: This discussion paper aims to examine issues in recruiting and retaining a group of racial/ethnic minorities-Asian American breast cancer survivors-for a technology-based intervention study. Methods:The parent study is an ongoing large-scale national-scope technology-based intervention study among a target number of 330 Asian American breast cancer survivors. During the recruitment and retention process, research diaries were written by research team members,

This study demonstrates that self-assembled diblock copolymer micelles can be used as a template to assemble cobalt (Co) nanocrystal (NC) arrays for use as charge storage layers in charge trap flash memory devices. Diblock copolymer micelles embedded with Co were synthesized on p-Si substrates having a thin tunneling oxide of HfO2. The micelle templates were completely removed by oxygen plasma treatment and reduction procedures, resulting in ordered arrays of Co NCs. The nonvolatile memory devices exhibit program/erase characteristics, as confirmed by their capacitance-voltage responses, current-voltage responses, endurance characterization, and nanoscale device measurement using scanning nonlinear dielectric microscopy.